We are developing a 95 GHz, 200 W, wideband vacuum electronic amplifier based on a 20 kV, 120 mA electron beam. The serpentine circuit is fabricated by multilayer UV-LIGA using an embedded polymer monofilament, which produces an all-copper monolithic structure with beam tunnel. We also discuss extension of the technique to upper millimeter-wave circuits at 670 GHz.

We will report on progress in quasi-optical power amplifiers at Caltech since last year’s meeting, where we reported a 5-W, Ka-band grid amplifier with a waveguide mode converter. This year we have developed an indium-phosphide V-band grid amplifier. The amplifier has been tested both as a transmission amplifier with a waveguide mode converter on the input and output side, and as a reflection a...

Bionic implants for the deaf require wide-dynamicrange low-power microphone preamplifiers with good wide-band rejection of the supply noise. Widely used low-cost implementations of such preamplifiers typically use the buffered voltage output of an electret capacitor with a built-in JFET source follower. We describe a design in which the JFET microphone buffer’s output current, rather than its o...

A statistically based modeling technique is developed for characterizing in-band and out-of-band intermodulation and cross-modulation distortions in multichannel amplifier environments. The model is based on a new multiple envelope memoryless behavioral model that captures the black-box characteristics of multichannel amplifiers. A power amplifier with a two code-division multiple-access channe...

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A novel technique for a self-equalized distributed amplifier is presented by showing the analogy between transversal filters and distributed amplifier topologies. The appropriate delay and gain coefficients of amplifier circuit are obtained by a Fourier expansion of the raised cosine spectrum in the frequency range of 0-40GHz.

This study entailed the development of a K-Band power amplifier (PA). The proposed PA was implemented and verified using 65-nm bulk CMOS process. designed with two stages to obtain sufficient gain in K band. had chip area 0.93×0.47 mm2 including RF DC pads. manufactured design maximum saturation 22.4∼22.7 dBm 19–21 GHz frequency band, added efficiency (PAE) 39 %∼40 %. In two-tone simulation res...

Optical communication systems, operating in C-band, are reaching their theoretically achievable capacity limits. An attractive and economically viable solution to satisfy the future data rate demands is employ transmission across full low-loss spectrum encompassing O, E, S, C L band of single mode fibers (SMF). Utilizing all five bands offers a bandwidth up $\sim$53.5THz (365nm) with loss below...

OFDM systems suffer from a high dynamic of the transmit signal, which leads to out-of-band radiation due to nonlinearities in the transmitter front-end. In order to overcome this issue there exist a variety of schemes reducing the out-of-band power. Most of these schemes consider the peak-to-average power ratio (PAR) as optimization criterion. In this paper, the PAR reduction scheme selected ma...