We calculate the spectrum of three-photon absorption (3PA) in zinc blende semiconductors using Kane's four-band model. We apply this to ZnSe and measure the 3PA spectrum using femtosecond pulses, obtaining excellent agreement. The spectrum shows the apparent onset of 3PA from the split-off band and also shows quantum interference between the several possible evolution pathways when exciting car...

The electronic structure of the VAs compound in the zinc-blende structure is investigated using a combined density-functional and dynamical mean-field theory approach. Contrary to predictions of a ferromagnetic semiconducting ground state obtained by density-functional calculations, dynamical correlations induce a closing of the gap and produce a half-metallic ferromagnetic state. These results...

We report resonant Raman scattering (RRS) by the TO, LO, and 2 LO modes of single wurtzite and zincblende GaAs nanowires. The optical band gap of wurtzite GaAs is 1.460 eV± 3meV at room temperature, and 35± 3meV larger than the GaAs zinc-blende band gap. Raman measurements using incoming light polarized parallel and perpendicular to the wire c axis allowed us to investigate the splitting of hea...

The interface between wurtzite and zinc blende InP has been identified as type-II, where electrons gather on the side holes of interface. photoluminescence resulting from recombination across is expected to be long-lived exhibit non-exponential decay emission intensity after pulsed excitation. We verify this prediction using time-resolved spectroscopy nanowires containing a single heterostructu...

Aligned ZnO/ZnSe core/shell nanorods (NRs) with type-II energy band alignment were fabricated by pulsed laser deposition of ZnSe on the surfaces of hydrothermally grown ZnO NRs. The obtained ZnO/ZnSe core/shell NRs are composed of wurtzite ZnO cores and zinc blende ZnSe shells. The bare ZnO NRs are capable of emitting strong ultraviolet (UV) near band edge (NBE) emission at 325-nm light excitat...

First-principles density functional calculations show that the high-pressure transitions of different semiconductors from zinc blende to rocksalt go through a transition state, which is universal in the sense that its position along the path and the corresponding geometry is independent of the chemical components of the semiconductor. This is explained using a Landau-like model expansion of the...