ZnO thin films were deposited on Si(400) substrates by e-beam evaporation technique, and then post-annealed at different annealing temperatures (200-800°C). Dependence of the crystallographic structure, nano-strain, chemical composition and surface physical Morphology of these layers on annealing temperature were studied. The crystallographic structure of films was studied using X-Ray Diffracti...

Metal-doped ZnO [MZO] thin films show changes of the following properties by a dopant. First, group III element (Al, In, Ga)-doped ZnO thin films have a high conductivity having an n-type semiconductor characteristic. Second, group I element (Li, Na, K)-doped ZnO thin films have high resistivity due to a dopant that accepts a carrier. The metal-doped ZnO (M = Li, Ag) films were prepared by radi...

ZnO thin films were successfully synthesized on a porous silicon (PS) substrate by chemical bathdeposition method. X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM),and photoluminescence (PL) analyses were carried out to investigate the effect of growth duration(3, 4, 5, and 6 h) on the optical and structural properties of the aligned ZnO nanorods. T...

Wurtzite ZnO films were grown on MgO(111) substrates by plasma-assisted molecular beam epitaxy (MBE). Different initial growth conditions were designed to monitor the film quality. All the grown ZnO films show highly (0001)-oriented textures without in-plane rotation, as illustrated by in situ reflection high-energy electron diffraction (RHEED) and ex situ X-ray diffraction (XRD). As demonstrat...

ZnO thin films were grown on r-plane sapphire substrates using electron cyclotron resonance (ECR) plasma-assistedmolecular-beam epitaxy. The effect of the oxygen ECR plasma power on the growth rate, structural, electrical, and optical properties of the ZnO thin films were studied. It was found that larger ECR power leads to higher growth rate, better crystallinity, lower electron carrier concen...

The current-voltage characteristics of Ni contacts with the surfaces of ZnO thin films as well as single crystal (0001) ZnO substrate are investigated. The ZnO thin film shows a conversion from Ohmic to rectifying behavior when annealed at 800°C. Similar findings are also found on the Zn-polar surface of (0001) ZnO. The O-polar surface, however, only shows Ohmic behavior before and after anneal...

Zeonor plastics are highly versatile due to exceptional optical and mechanical properties which make them the choice material in many novel applications. For potential use in flexible transparent optoelectronic applications, we have investigated Zeonor plastics as flexible substrates for the deposition of highly transparent ZnO and AZO thin films. Films were prepared by pulsed laser deposition ...

To improve electrical properties a high temperature annealing treatment was applied to several transparent conductive oxides (TCO), namely tin doped indium oxide (ITO), Gaor Aldoped ZnO (ZnO:Al/Ga), ion beam assisted deposited (IBAD) ZnO:Ga and Ga doped zinc magnesium oxide (ZnMgO:Ga). All these films were grown by magnetron sputtering. During the annealing process all TCO films were capped wit...

zno thin films with preferred orientation along the (002) plane were prepared onto the glass substrates by the sol-gel spin coating method for different post- annealing temperatures. the xrd study confirms that the thin films grown by this method have good crystalline hexagonal wurtzite structure. the optical band gap of the samples was determined from uv-visible spectra. it is found that the s...

the effects of zinc oxide nanorod (zno-n) incorporation on thephysicochemical properties of tapioca starch / bovin gelatin composite film such as water absorption capacity (wаc), water solubility and permeability to water vapour (wvp) were investigated. in this search, zno-n was homogenized by sonication and added into tapioca starch / bovine gelаtin dispersions аt different concentrations (e.g...