Although IGBT turn on losses can be comparable to turn off losses, IGBT turn on has not been as thoroughly studied in the literature. Under clamped inductive load condition at turn on there is strong interaction between the IGBT and the freewheeling diode undergoing reverse recovery. A physics-based IGBT model is used that has been proved accurate in the simulation of IGBT turn off. Both resist...

6.5 kV level IGBT (Insulated Gate Bipolar Transistor) modules are widely applied in megawatt locomotive (MCUs) traction converters, to achieve an upper 3.5 kV DC link, which is beneficial for decreasing power losses and increasing the power density. Reverse Conducting IGBT (RC-IGBT) constructs the conventional IGBT function and freewheel diode function in a single chip, which has a greater flow...

We present a newly developed 4500 V and 2000 A Press-Pack IGBT module for power transmission and industrial voltage drives applications. The module employs SPT IGBT chips with exceptionally low losses and high Safe Operating Area (SOA). The use of SPT IGBT chips in this Press Pack IGBT module allows for higher power densities and the package provides a highly flexible modular platform with very...

A new insulated gate bipolar transistor structure, the 3D-IGBT, is presented. The 3D-IGBT utilizes selective epitaxial silicon to form a top contacted anode and still retain the cellular structure of vemcally oriented devices. The 3D-IGBT , unlike other fully integrable power devices, exploits the merits of cellular structure to increase its packing density and thus reduce its on-resistance per...

A practical parameter extraction method is presented for the Fourier-based-solution physics-based IGBT model. In the extraction procedure, only one simple clamped inductive load test is needed for the extraction of the eleven and thirteen parameters required for the NPT and PT IGBT models, respectively. Validation with experimental results from various structure IGBTs demonstrates the accuracy ...

A novel insulated gate bipolar transistor (IGBT) entitled NPN aided fast switching IGBT (NFS-IGBT) with a P-buffer layer is presented, which enhances the switching speed greatly. Compared with the conventional IGBT, double sided NPN structure is incorporated into the anode to facilitate the turn-off process. The proposed structure is verified by two-dimensional mixed device-circuit simulation, ...

Insulated gate bipolar transistor (IGBT) modules which can fail to short circuit mode have great of applications in electricity network related fields. Single IGBT samples have been constructed with the standard Al wire bonding, flexible printed circuit board (PCB) interconnect and sandwich structure technologies. The overcurrent failure modes of the constructed IGBT samples have been tested un...

Sintering of nanosilver paste has been extensively studied as a lead-free die-attach solution for bonding semiconductor power chips, such as the power insulated gated bipolar transistor (IGBT). However, for the traditional method of bonding IGBT chips, an external pressure of a few MPa is reported necessary for the sintering time of ~1 h. In order to shorten the processing duration time, we dev...