Static leakage currents represent a major issue in nano-scale CMOS. In digital VLSI circuits, the most relevant contributions to the overall leakage current are: sub-threshold conduction, gate current and band-to-band-tunneling (BTBT) current, which flows from drain (source) to the substrate through the reverse biased diffusion junctions [1]. While the last one has been recognized as an importa...

A homo-junction In0.53Ga0.47As tunneling diode is investigated using full-band, atomistic quantum transport approach based on a tight-binding model (TB) and the Non-equilibrium Green’s Function formalism. Band gap narrowing (BGN) is included in TB by altering its parameters using the Jain-Roulston model. BGN is found to be critical in the determination of the current peak and the second turn-on...

In this paper, the electrical characteristics and sensitivity analysis of staggered type p-channel heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET) are thoroughly investigated via simulation study. The minimum lattice mismatch between InAs/GaAs0.1Sb0.9 layers besides low carrier effective mass of materials provides high probability ...

Field Effect Diode (FED)s are interesting device in providing the higherON-state current and lower OFF–state current in comparison with SOI-MOSFETstructures with similar dimensions. The impact of channel length and band-to-bandtunneling (BTBT) on the OFF-state current of the side contacted FED (S-FED) has beeninvestigated in this paper. To find the lowest effective channel length, this device i...

In quest of new (”post-CMOS”) switches, in particular for ultra-low power application, the Tunnel Field Effect Transistor (TFET) [1] raised a lot of attention. The working principle of this device is the generation of electron-hole pairs by band-to-band tunneling (BTBT) between the valence band (VB) and the conduction band (CB). Thus, contrary to the common MOSFET, the source of current in a TF...

The effect of uniaxial-strain, band-structure, mobility, effective masses, density of states, channel orientation and highfield transport on the drive current, off-state leakage and switching delay in nano-scale, Silicon (Si) and Germanium (Ge), pMOS DGFETs is thoroughly and systematically investigated. To accurately model and capture all these complex effects, different simulation techniques, ...

The shrinking MOSFET has an increasing subthreshold leakage current caused by various mechanisms. For example, the band-to-band tunneling (BTBT) current from drain to channel results in a large subthreshold leakage current in a 50nm MOSFET [1]. Recently, the double-gate (DG) fully depleted (FD) MOS was investigated. In the DG-MOS, the channel region is intrinsic or lightly doped silicon so that...

The Point Defect Model (PDM) describes the corrosion resistance properties of oxide films based on interfacial reactions and defect transport, which are affected by electric field inside film. PDM assumes a constant strength due to band-to-band tunneling (BTBT) electrons separation holes high fields. In this manuscript we present more complex expansion common models simulate steady state test a...

The larger volume of capacitor and higher leakage current of transistor have become the inherent disadvantages for the traditional one transistor (1T)-one capacitor (1C) dynamic random access memory (DRAM). Recently, the tunneling FET (TFET) is applied in DRAM cell due to the low off-state current and high switching ratio. The dual-gate TFET (DG-TFET) DRAM cell with the capacitorless structure ...