A new curvature-corrected bandgap reference is presented which is able to function at supply voltages as low as 1 V, at a supply current of only 100 PA. After trimming this bandgap reference has a temperature coefficient (TC) of +4 ppm/OC. The reference voltage is about 200 mV and it can simply be adjusted to higher reference voltages, The temperature range of this circuit is from O to 125” C. ...

A sub-1V bandgap voltage reference (BGVR) in 0.16μm CMOS is presented that circumvents the trade-off between area and power consumption in conventional sub-1V BGVR topologies. This circuit can be used in systems to generate reference voltages locally, eliminating the conventional relatively large BGVR and its global reference voltage distribution interconnect. The active area is 0.0025mm; at 29...

This paper describes the design of a bandgap reference, implemented in 0.50 μm CMOS technology. The circuit generates a reference voltage of 1.2218V. It can operate between 20oC & 70o C. Total variation of reference voltage within the temperature range is 2.6mV which is 0.213% of the reference voltage. This circuit works in a current feedback mode, and it generates its own reference current, re...

Semiconductors with a moderate bandgap have enabled modern electronic device technology, and the current scaling trends down to nanometer scale have introduced two-dimensional (2D) semiconductors. The bandgap of a semiconductor has been an intrinsic property independent of the environments and determined fundamental semiconductor device characteristics. In contrast to bulk semiconductors, we de...

Using charge modulated electroabsorption spectroscopy (CMEAS), for the first time, the energy level alignment of a polymer:fullerene bulk heterojunction photovoltaic cell is directly measured. The charge-transfer excitons generated by the sub-bandgap optical pumping are coupled with the modulating electric field and introduce subtle changes in optical absorption in the sub-bandgap region. This ...

A sub-1V bandgap voltage reference (BGVR) in 0.16μm CMOS is presented that circumvents the trade-off between area and power consumption in conventional sub-1V BGVR topologies. This circuit can be used in systems to generate reference voltages locally, eliminating the conventional relatively large BGVR and its global reference voltage distribution interconnect. The active area is 0.0025mm; at 29...

We present a simple picture to understand the bandgap variation of any chiral carbon nanotubes with tensile and torsional strains. Using this picture, we are able to predict a simple dependence of d(Bandgap)/d(strain) on the value of (Nx −Ny) mod 3, for semiconducting tubes. We also predict a novel change in sign of d(Bandgap)/d(strain) as a function of tensile strain arising from a change in t...

Zinc oxysulfide nanocrystals with zinc blende phase are synthesized through a wet-chemical method. An affirmation of the crystal structure, elemental homogeneity and phase transformation is obtained by X-ray diffraction and authenticated by electron micrographic studies. Theoretical observations have strongly supported the thermodynamic solubility limit for its (30%) formation. An anomalous ban...