We have studied friction and dissipation in single and bilayer graphene films grown epitaxially on SiC. The friction on SiC is greatly reduced by a single layer of graphene and reduced by another factor of 2 on bilayer graphene. The friction contrast between single and bilayer graphene arises from a dramatic difference in electron-phonon coupling, which we discovered by means of angle-resolved ...

Pablo San-Jose1 and Elsa Prada2 1Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Cantoblanco, 28049 Madrid, Spain 2Departamento de Fı́sica de la Materia Condensada, Instituto de Ciencia de Materiales Nicolás Cabrera, Instituto de Fı́sica de la Materia Condensada, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid, Spain (Received 25 April 2013; revised manuscript received 18 July...

We study the static and dynamic screening of gapped AB-stacked bilayer graphene. Unlike previous works we use the full 4-band model instead of the simplified 2-band model. We find that there are important qualitative differences between the dielectric screening function obtained using the simplified 2-band model and the 4-band model. In particular, within the 4-band model, in the presence of a ...

The discovery of electric field induced band gap opening in bilayer graphene opens a new door for making semiconducting graphene without aggressive size scaling or using expensive substrates. However, bilayer graphene samples have been limited to μm(2) size scale thus far, and synthesis of wafer scale bilayer graphene poses a tremendous challenge. Here we report homogeneous bilayer graphene fil...

Bilayer graphene has attracted wide attention due to its unique band structure and bandgap tunability under specific (Bernal or AB) stacking order. However, it remains challenging to tailor the stacking order and to simultaneously produce large-scale and high-quality bilayer graphene. This work introduces a fast and reliable method of growing high-quality Bernal stacked large-area (>3 in. × 3 i...