As the scaling of Si MOSFET approaches towards its limiting value, new alternatives are coming up to overcome these limitations. In this paper first we have reviewed carbon nanotube field effect transistor (CNTFET) and types of CNTFET. We have then studied the effect of channel length and chirality on the drain current for planer CNTFET. The Id~Vd curves for planer CNTFETs having different chan...

In this paper, we have design of ternary 2x2 Sram memory Array using carbon Nano-tube field-effect transistors (CNTFETs).the CNTFET technology has new parameters and characteristics which determine the performances such as current driving capability, speed, power consumption and area of circuits have been proposed for ternary 2x2 Sram memory array is needed to optimize performance using CNTFET ...

Abstract This paper proposes a design of gate all around CNTFET based ternary content addressable memory (TCAM). TCAM cell is designed and simulated in HSPICE using top gated (TG-CNTFET) & CNTTFET (GAA-CNTFET). Dual chirality technique used to i.e. different for n-type p-type which utilizes threshold voltages hence improve the performance. Comparative analysis has been done various paramete...

By coating a thin layer of photosensitive polymer such as poly3-octylthiophene-2,5-diyl (P3OT), the Carbon Nanotube Field Effect Transistor (CNTFET) provides an optical gating phenomenon [1]. It is called Optical-Gated CNTFET (OG-CNTFET or OGCNTFET). Compared to the conventional CNTFET, the OG-CNTFET reveals a right hand shift of the drain current vs. gate bias voltage. If this device is under ...

Multipliers are one of the most important components in microprocessors and DSP processors [9]. Baugh Wooley is one among them and it is an array multiplier. Array multipliers have a more regular layout and it presents high speed performance. The paper deals with the design of a Baugh Wooley multiplier using Carbon Nanotube Field Effect Transistor (CNTFET). A Verilog-A formulation of the Stanfo...

Carbon Nanotube Field Effect Transistor (CNTFET) has a wide scope in the field of Nanotechnology. These are currently considered as the replacement to the Si MOSFET. These devices show the ballistic transport in the current conduction. In this paper, a Verilog-A formulation of the Stanford compact model is used for the simulation of different logic gates in Cadence and finally Mod-16 Counter is...

In this review, we compare the distinct properties of Carbon Nanotube Field Effect Transistor (CNTFET) based applications with MOSFET based applications in memory and digital electronics technology. In nanoelectronics circuitry, CNTFET has opened new dimensions with extreme opportunities of improvement in circuit performance due to its extreme mobility, ballistic conduction and so forth. Apart ...

Background Carbon Nanotube Field Effect Transistors (CNTFETs) have high charge sensitivity at room temperature [1]. By using this sensitivity, some nonvolatile memory devices have been demonstrated with charge trapping in SiO 2 gate insulator [2, 3]. Besides, a new design of synapse-like circuit requires a multi-level nonvolatile memory [4]. For this application, and according to its high charg...

This paper deals with the compact modeling of several emerging technologies: first, the double-gate MOSFET (DG MOSFET), and second, the carbon nanotube field-effect transistor (CNTFET). For CNTFETs, we propose two compact models, the first one with a classical behavior (like MOSFET), and the second one with an ambipolar behavior (Schottky-barrier CNTFET). All the models have been compared with ...

The role of phonon scattering in carbon nanotube field-effect transistors sCNTFETsd is explored by solving the Boltzmann transport equation using the Monte Carlo method. The results show that elastic scattering in a short-channel CNTFET has a small effect on the source-drain current due to the long elastic mean-free path smfpd s,1 mmd. If elastic scattering with a short mfp were to exist in a C...