A dual-halo dual-dielectric triple-material cylindrical-gate-all-around/surrounding gate (DH-DD-TM-CGAA/SG) MOSFET has been proposed and an analytical model for the transconductance-to-drain current ratio (TDCR) has been developed. It is verified that incorporation of dual-halo with dual-dielectric and triple-material results in enhancing the device performance in terms of improved TDCR. The ef...

In this paper, a hybrid dual-band cylindrical dielectric resonator antenna with parasitic slot fed by a microstrip line that is suitable for wireless body area network is proposed. In this configuration, the dielectric resonator performs the functions of an effective radiator along with the feeding structure and the slot in the ground plane. By optimizing the structural parameters, the antenna ...

A novel circular micro strip dual band stub loaded antenna is described. The antenna is built with a dielectric constant of (?r =2. 33) with RT/5870 as the substrate material. Due to the effect of stub loading, dual frequency is produced at 1. 88 GHz and 2. 73 GHz respectively for the stub length=17 m. m. With the further increment of stub length, shifting of secondary resonant frequency is pos...

Dual Metal Gate (DMG) technology was proposed to reduce the short channel effects (SCE’s) of double gate MOSFETs. But, DMG alone is not enough to rectify the problem of gate tunneling current due to thinning of oxide layer with device downscaling. So, the use of high-k dielectric as gate oxide is considered to overcome the gate tunneling effect. But, high gate dielectric thickness leads to high...

The variation of the temperature-dependent performance an electronic device is one major concerns in predicting actual electrical characteristics as bandgap semiconducting material varies with temperature. Therefore, this article, we investigate impact temperature variations ranging from 300 to 450K on DC, analog/ radio frequency, and linearity dual stack gate oxide-source dielectric pocket-tun...

We report dual-gate modulation of topological insulator field-effect transistors (TI FETs) made on Bi2Te3 thin flakes with integration of atomic-layer-deposited (ALD) Al2O3 high-k dielectric. Atomic force microscopy study shows that ALD Al2O3 is uniformly grown on this layer-structured channel material. Electrical characterization reveals that the right selection of ALD precursors and the relat...

This paper describes a novel dual-band patch antenna on organic magnetic substrate for wireless local area networks (WLAN) wireless communication (at 2.4 and 5 GHz). The dual-band operation is obtained by embedding a pair of L-shaped slots. The magnetic material is adopted because the substrate can reduce the size of antenna 40%, comparing with rectangular microstrip antennas on normal dielectr...