Single crystals consisting various surface morphologies and epitaxial structures were applied to investigate the effect of other phase regions in the vicinity of a given tethered chains-covered area having a certain molecular weight of amorphous brushes. The designed experiments demonstrated that regardless of the type of surface morphology (patterned and especial mixed-brushes, homo and co...

We have investigated structural and magnetic properties of epitaxial (100) N&Feel0 films grown on relaxed Cu/Si(lOO) seed layers. The crystallographic texture and orientation of these films was analyzed in situ by reflection high energy electron diffraction (RHEED), and M situ by x-ray diffraction and cross-sectional transmission electron microscopy (XTEM). In particular, RHEED intensities were...

The term ‘epitaxial’ is applied to a film grown on top of the crystalline substrate in ordered fashion that atomic arrangement of the film accepts crystallographic structure of the substrate. Epitaxial growth is one of the most important techniques to fabricate various ‘state of the art’ electronic and optical devices. Modern devices require very sophisticated structure, which are composed of t...

Ni nanocrystals (NCs) were embedded in BaTiO3 epitaxial films using the laser molecular beam epitaxy. The processes involving the self-organization of Ni NCs and the epitaxial growth of BaTiO3 were discussed. With the in situ monitoring of reflection high-energy electron diffraction, the nanocomposite films were engineered controllably by the fine alternation of the self-organization of Ni NCs ...

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We grew epitaxial layers on 4H-silicon carbide (SiC) Si-face substrates with a 1° off-angle. The suppression of 3C-inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed to decrease residual nitrogen incorporation. 3C inclusions were generated both at the interface between the substrate and epitaxial layer, and during...

Epitaxial graphene films examined were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on the epitaxial graphene was realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are retained aft...

Epitaxial La0:6Sr0:4MnO3 (LSMO) thin films were grown by pulsed laser deposition. Relationships between magnetic properties of LSMO epitaxial thin films and ablation conditions such as ablated spot area and total incident laser energy in a pulsed laser deposition technique were studied. Ablated spot area was controlled by changing the focus lens position and total laser energy. Epitaxial growth...

Results on epitaxial lateral overgrowth of GaAs layers are reported. The methods of controlling the growth anisotropy, the effect of substrate defects filtration in epitaxial lateral overgrowth procedure and influence of the mask on properties of epitaxial lateral overgrowth layers will be discussed. The case of GaAs epitaxial lateral overgrowth layers grown by liquid phase epitaxy on heavily d...