نتایج جستجو برای: FinFET

تعداد نتایج: 555  

2015
Jianping Hu Yuejie Zhang Chenghao Han Weiqiang Zhang

Abstract: Scaling supply voltage of FinFET circuits is an efficient method to achieve low power dissipation. Superthreshold FinFET logic circuits can attain low power consumption with favorable performance, because FinFET devices operating on medium strong inversion regions can provide better drive strength than conventional CMOS transistors. The supply voltage of the super-threshold circuit is...

Journal: :IEICE Transactions 2015
Tatsuya Ohguro Satoshi Inaba Akio Kaneko Kimitoshi Okano

In this paper, we discuss the process, layout and device technologies of FinFET to obtain high RF and analog/mixed-signal performance circuits. The fin patterning due to Side-wall transfer (SWT) technique is useful to not only fabricate narrow fin line but also suppress the fin width variation comparing with ArF and EB lithography. The H2 annealing after Si etching is useful for not only to imp...

2004
Kidong Kim Ohseob Kwon Jihyun Seo Taeyoung Won

A two-dimensional quantum mechanical modeling has been performed to simulate a nano-scale FinFET by obtaining the self-consistent solution of coupled Poisson and Schrödinger equations. Calculated current-voltage (IV) curves are carefully compared with experimental data to verify the validity of our theoretical work. The transconductance (Gmmax=380) is optimized through varying the Si-fin thickn...

2017
Wen-Chin Lee Chenming Hu Xuejue Huang Yang-Kyu Asano Ching-Te Chuang S. Cristoloveanu C. Mazure F. Letertre H. Iwai

The parametric variations of FinFET in 22 nm due to doping concentrations are presented. In this paper different parameters of FinFET such as subthreshold slope, DIBL, threshold voltage, transconductance and Ioff are analysed using Synopsys Sentaurus 3D TCAD. From the results, it can be concluded that, optimized doping leads to better characteristics for the FinFET.

2016
Mr. P. Ramu G. VR. Sakthivel

The comparator is designed in pipelined ADC. FINFET is the technology which performs the dual gate MOSFET. This thesis focuses on the high-speed design of pipelined ADC. In the meanwhile, we try to minimize the power dissipation as well. In this thesis, A semidigital Gm-based amplifier is proposed for a low-power pipelined analog-to-digital converter (ADC )in HSPICE .And also we compare the pow...

2014
Keerti Kumar

The parametric variations of FinFET in 22 nm due to doping concentrations are presented. In this paper different parameters of FinFET such as subthreshold slope, DIBL, threshold voltage, transconductance and Ioff are analysed using Synopsys Sentaurus 3D TCAD. From the results, it can be concluded that, optimized doping leads to better characteristics for the FinFET.

2016
Meng-Chou Chang Kai-Lun He Yu-Chieh Wang

Fig. 1. FinFET device structures. (a) Shorted-gate FinFET. (b) Independent-gate FinFET. Abstract—An independent-gate FinFET can operate in two modes: SG (shorted-gate) and IG (independent-gate) modes, and thus a FinFET-based circuit offers rich design options for lower power, better performance or reduced transistor count. In this paper, we present two novel dynamically power-gated FinFET TCAM ...

2015
Jianping Hu Chenghao Han Yuejie Zhang Beibei Qi Haiyan Ni

Lowering supply voltage of FinFET circuits is an effective way to achieve low power dissipations. In this paper, the super-threshold adiabatic FinFET circuits based on PAL-2N operating on medium strong inversion regions are addressed in terms of energy consumption and operating frequency. The supply voltage of the super-threshold circuits is much larger than the threshold voltage of the transis...

2016
Mehdi Saremi Ali Afzali-Kusha Saeed Mohammadi

In this paper, a fin-shaped field effect transistor (FinFET) structure which uses ground plane concept is proposed and theoretically investigated. The ground plane reduces the coupling of electric field between the source and drain reducing drain-induced barrier lowering (DIBL). To assess the performance of the proposed structure, some device characteristics of the structure have been compared ...

2013
Cheng-Hsien Chang Hung-Pei Hsu Chan-Hsiang Chang Ming-Tsung Shih Shih-Chuan Tseng

In this paper, we have proposed a novel FinFET with extended body under the poly gate, which is called EB-FinFET, and its characteristic is demonstrated by using three-dimensional (3-D) numerical simulation. We have analyzed and compared it with conventional FinFET. The extended body height dependence on the drain induced barrier lowering (DIBL) and subthreshold swing (S.S) have been also inves...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید