There is an increasing demand for air-dry performance of fluorocarbon finished materials. Thus, dyeing with different types of reactive, mono, bi, and multi-functional, dyes was evaluated as a novel treatment to create correct surface interface to maintain fluorocarbon performance without ironing or tumble drying. The effects of pre-treatment on fluorocarbon finishing of cotton fabric, a cellul...

The mechanisms underlying selective etching of a SiO2 layer over a Si or Si3N4 underlayer, a process of vital importance to modern integrated circuit fabrication technology, has been studied. Selective etching of SiO2-to-Si3N4 in various inductively coupled fluorocarbon plasmas (CHF3 , C2F6/C3F6 , and C3F6/H2) was performed, and the results compared to selective SiO2-to-Si etching. A fluorocarb...

Fluorocarbon plasmas are widely used to chemically modify surfaces and deposit thin films. The deposition of mass selected fluorocarbon ions is useful for isolating the effects specific to polyatomic ions. In this study, the detailed chemical modifications that result from the deposition of beams of polyatomic fluorocarbon ions (C3F5 + and CF3 ) on polystyrene surfaces at experimental fluxes ar...

The wetting of the liquid fluorocarbon (perfluoromethylcyclohexane) on the liquid hydrocarbon (eicosane) surface was studied just above the eicosane melting point, where the eicosane exhibits surface freezing (SF) behavior. The thickness of the wetting layer was controlled by changing the fluorocarbon chemical potential relative to the reservoir through temperature differences T. The evolution ...

For various fluorocarbon processing chemistries in an inductively coupled plasma reactor, we have observed relatively thick ~2–7 nm! fluorocarbon layers that exist on the surface during steady state etching of silicon. In steady state, the etch rate and the surface modifications of silicon do not change as a function of time. The surface modifications were characterized by in situ ellipsometry ...

The effect of radio frequency ~rf! bias frequency on SiO2 feature etching using inductively coupled fluorocarbon plasmas is investigated. It is found that the rf bias frequency can have an important effect on SiO2 feature etch rate, microtrenching phenomena, and SiO2-to-photoresist etch selectivity. In addition, the effect of rf bias pulsing on inductively coupled fluorocarbon plasma SiO2 etchi...

In this study, s-triazine rings (or their derivatives) were introduced into a two-dimensional phase-separated mixed monolayer of hydrocarbon-fluorocarbon chains. The diamino-triazine ring facilitated the absorption deoxyribonucleic acid (DNA) molecules in monolayer. diamino ring-containing copolymers which hydrogenated hydrophobic chain was able to form mixed-phase-separated monolayers when com...

Selective etching of SiO2 over polycrystalline silicon has been studied using CHF3 in an inductively coupled plasma reactor ~ICP!. Inductive powers between 200 and 1400 W, as well as pressures of 6, 10, and 20 mTorr were used in this study of the etch rate and selectivity behaviors for silicon dioxide, silicon, and passively deposited fluorocarbon films. Using in situ ellipsometry, the etch rat...

It has been found that in the etching of SiO2 using CHF3 in an inductively coupled plasma reactor of the planarized coil design, a thin steady state fluorocarbon film can play an important role in determining the rate of etching. This etching is encountered as the amount of bias power used in the SiO2 etching process is increased, and a transition from fluorocarbon film growth on the SiO2 to an...

The etching of Si, SiO2 , Si3N4 , and SiCH in fluorocarbon plasmas is accompanied by the formation of a thin steady-state fluorocarbon film at the substrate surface. The thickness of this film and the substrate etch rate have often been related. In the present work, this film has been characterized for a wide range of processing conditions in a high-density plasma reactor. It was found that the...