نتایج جستجو برای: Gate Insulator
تعداد نتایج: 59368 فیلتر نتایج به سال:
In this paper, the electrical performance of double gate organic field effecttransistor (DG-OFET) are thoroughly investigated and feasibility of the deviceas an efficient biosensor is comprehensively assessed. The introduced deviceprovides better gate control over the channel, yielding better charge injectionproperties from source to channel and providing higher on-state...
Recently, high – K materials such as Al2O3 and TiO2 films have been studied to replace ultra thin gate silicon dioxide film. In the present work, these films were grown on the top of Si(100) surface at different temperatures and under ultra high vacuum conditions. The obtained results showed that Al2O3 has a structure better than that of TiO2 and thus can be used as a good gate dielectric ...
In this paper the features of multiple material gate silicon-on-insulator MOSFETs are presented and compared with single material gate silicon-on-insulator MOSFET structures. The results indicate that the multiple material gate structures reduce short channel effects such as drain induce barrier lowering, hot electron effect and better current characteristics in comparison with single material ...
The next generation of electronics is likely to incorporate various functional materials, including those exhibiting ferroelectricity, ferromagnetism and metal-insulator transitions. Metal-insulator transitions can be controlled by electron doping, and so incorporating such a material in transistor channels will enable us to significantly modulate transistor current. However, such gate-controll...
Introduction For high-speed logic applications, suppression of the power consumption is very important and thus supply voltage should be reduced at every new generation. In order to realize high performance despite a low supply voltage, gate oxide thickness has to be reduced continuously. In fact, it has been suggested that even 1.6 -1.1 nm EOT (equivalent physical SiO2 thickness) gate insulato...
polyvinylpyrrolidone / nickel oxide (pvp/nio) dielectrics were fabricated with sol-gel method using 0.2 g of pvp at different working temperatures of 80, 150 and 200 ºc. structural properties and surface morphology of the hybrid films were investigated by x-ray diffraction (xrd) and scanning electron microscope (sem) respectively. energy dispersive x-ray spectrosc...
Recently, the quality of the oxide-TFT gate insulator is given the utmost consideration strongly affecting device performance. In this study, preliminary experiments were carried out using a multi-component of lanthanum hafnium oxide (LHO) as a gate insulator. First, we investigated the electrical properties of LHO thin films deposited by ECR-ALD. Also, we report the fabrication and characteris...
A proof-of-concept metal–insulator–semiconductor (MIS) AlGaN/GaN high-electron mobility transistor (HEMT) that uses a self-aligned 10 nm AlOx gate insulator and SiNx passivation in the device access regions was investigated. Self-alignment of the gate insulator to metal was achieved by utilizing a submicron tri-layer photoresist pattern to lift-off sequentially-deposited AlOx dielectric and Ni/...
In this study, a proposed Microwave-Induction Heating (MIH) scheme has been systematically studied to acquire suitable MIH parameters including chamber pressure, microwave power and heating time. The proposed MIH means that the thin indium tin oxide (ITO) metal below the Poly(4-vinylphenol) (PVP) film is heated rapidly by microwave irradiation and the heated ITO metal gate can heat the PVP gate...
This study examined the correlation between the off-state leakage current and dynamic on-resistance (RON) transients in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without a gate insulator under various stress conditions. The RON transients in a Schottky-gate HFET (SGHFET) and metal-insulator-semiconductor HFET (MISHFET) were observed after applying various amounts of dr...
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