Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective ma...

The approaching scaling of Field Effect Transistors (FETs) in nanometer scale assures the smaller dimension, low-power consumption, very large computing power, low energy delay product and high density as well as high speed in processor. Trilayer graphene nanoribbon with different stacking arrangements (ABA and ABC) indicates different electrical properties. Based on this theory, ABA-stacked tr...

Graphene has recently emerged as a serious contender for the post Silicon era. Graphene NanoRibbon (GNR) devices have similar performance characteristics as Carbon Nano Tube (CNT) ones. However, lithographic patterning methods applied to graphene avoids the degree of chirality control and alignment issues typical of CNTs. GNR devices and GNR interconnect can be seamlessly obtained by patterning...

Top-gated epitaxial graphene nanoribbon (EGNR) field effect transistors (FETs) were fabricated on epitaxial graphene substrates which demonstrated the opening of a substantial bandgap. Hydrogen silsesquioxane (HSQ) was used for the patterning of 10 nm size linewidth as well as a seed layer for atomic layer deposition (ALD) of a high-k dielectric aluminum oxide (Al2O3). It is found that the reso...

We describe a simple graphene nanoribbon and bottom gate system and present numerical algorithms for solving Poisson’s and Thomas–Fermi equations for electrons in the graphene nanoribbon. The Poisson’s equation is solved using finite difference and finite element methods. Using the Poisson and Thomas–Fermi equations we calculate an electrostatic potential and surface electron density in the gra...

A process for fabricating dense graphene nanoribbon arrays using self-assembled patterns of block copolymers on graphene grown epitaxially on SiC on the wafer scale has been developed. Etching masks comprising long and straight nanoribbon array structures with linewidths as narrow as 10 nm were fabricated, and the patterns were transferred to graphene. Our process combines both top-down and sel...

Directed self-assembly of a block copolymer is successfully employed to fabricate device-oriented graphene nanostructures from CVD grown graphene. We implemented mussel-inspired polydopamine adhesive in conjunction with the graphoepitaxy principle to tailor graphene nanoribbon arrays and a graphene nanomesh located between metal electrodes. Polydopamine adhesive was utilized for facile and dama...

We have used classical molecular dynamics based on the Brenner potential describing carbon-carbon covalent bonds to study the melting point and vacancy movement in a rectangular graphene nanoribbon. The melting point of the graphene nanoribbon extracted from the numerical simulation is ~3400 K. We also found that two separated vacancies at high temperature (e.g., ~3000 K, below the melting poin...

The new revolution in dental materials is due to use of nanomaterials in dentistry. Graphene is one of the carbon nanoallotrope that has the potential to enhance properties of materials used in dentistry. The use of this 2D crystal is dentistry is virtue to its typical properties that provides improved performance, extended functionality in materials. In this paper, a review is done to study 3D...

We report mid-infrared photocurrent spectra of graphene nanoribbon arrays on SiO2 dielectrics showing dual signatures of the substrate interaction. First, hybrid polaritonic modes of graphene plasmons and dielectric surface polar phonons produce a thermal photocurrent in graphene with spectral features that are tunable by gate voltage, nanoribbon width, and light polarization. Second, phonon po...