properties of AIGaN-channel HEMT fabricated on a free-standing A1N substrate, estimated at temperatures between 25 and 300°C. The AIGaNchannel HEMT exhibited significantly reduced temperature dependence in DC and RF device characteristics, as compared to those for the conventional A1GaN/GaN HEMT, resulting in larger values in both saturated drain current and current gain cutoff frequency at 300...

Metamorphic InAlAs/InGaAs HEMT are successfully demonstrated, exhibiting several advantages over conventional P-HEMT on GaAs and LM-HEMT on InP substrate. The strainrelaxed metamorphic structure is grown by MBE on the GaAs substrate with the inverse-step graded InAlAs metamorphic buffer. The device with 40% indium content shows the better characteristics than the device with 53% indium content....

In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity a...

This paper focuses on InP-based, HEMT Monolithic Millimeter-wave Integrated Circuit (MMIC) power amplifiers for applications to heterodyne receivers, transmitters, and communications circuits. Recently, we have developed several HEMT MMIC circuits using HRL Laboratories' 0.1 um InP HEMT technology with unprecedented high frequency performance and output power. Our results include an 80 GHz band...

Northrop Grumman Space Technology (NGST) has recently initiated process development for fabricating 0.1 μm InGaAs/InAlAs/InP High Electron Mobility Transistor (HEMT) MMICs on 100 mm InP substrates. Successful development of this process will further reduce costs for InP HEMT MMICs and rival those of GaAs-based HEMT MMICs, including GaAs-based metamorphic HEMT technology, with superior performan...

A simple analytical model has been developed to optimize biasing conditions for obtaining maximum linearity among lattice-matched, pseudomorphic and metamorphic HEMT types as well as enhancement and depletion HEMT modes. A nonlinear current-voltage model has been simulated based on extracted data to study and select the most appropriate type and mode of HEMT in terms of a given gate-source bias...

This paper focuses on InP-based, HEMT Monolithic Millimeter-wave Integrated Circuit (MMIC) power amplifiers for applications to heterodyne receivers, transmitters, and communications circuits. Recently, we have developed several HEMT MMIC circuits using HRL Laboratories’ 0.1 um InP HEMT technology with unprecedented high frequency performance and output power. Our results include an 80 GHz band...

We present for the first time an un-buffered WBand oscillator on a Metamorphic HEMT GaAs substrate. The oscillator has an output power of +1.5 dBm and a phase noise of -101 dBc/Hz at a 1 MHz offset. This oscillator will be part of an integrated monolithic front end. Index Terms – Metamorphic HEMT, HEMT, Oscillator, millimeter wave, front end.

In this paper, an effective T-gate with Drain-Field-Plate (TGDFP) technology is used in GaN-based HEMT for high breakdown voltage of 500V and drain current of 540mA/mm. Silvaco TCAD simulation showed that normally-off TGDFP HEMT with recessed gate length of 0.5μm exhibited high threshold voltage up to +1V and transconductance of 140mS/mm along with frequency operation in Sband (∼3GHz). The prop...

1. INTRODUCTION Wireless networks are economical and portable. It market ratio is 1:3. Wireless networks are famous among consumers due to secure, reliable, robust and portable connections. WiMax network is one of the famous networks among users; it is provides excellent multimedia services. WiMax is a (Worldwide Interoperability for Microwave Access) which is IEEE 802.16 standard supports lice...