نتایج جستجو برای: I-V characteristics

تعداد نتایج: 1882161  

E Mozafari, N Shahtahmasebi, SA Ketabi,

Making use of a generalized Green’s function technique and Landauer formalism, the temperature depended current-voltage (I-V) characteristics of C60 molecule, sandwiched between two metallic electrodes are numerically investigated. In addition, the influence of the electron-phonon coupling strength on the electronic properties of the molecule is studied. The I-V characteristics of the molecule ...

بقائی نژاد, مجید, حاجی بدلی, عسگر, فرزی, غلامعلی,

In this research, Schottky diode with Al-PANI/MWCNT-Au structure was fabricated using spin coating of composite polymer and physical vapor deposition of metals. For this purpose, a thin layer of gold was coated on glass and then composite of polyaniline/multi-walled carbon nanotube was synthesized and spin-coated on gold layer. Finally, a thin layer of aluminum was coated on polymer layer. The ...

Journal: :journal of nanostructures 2015
s. ramezani sani

this study reports the fabrication of n-tio2/p-si hetrojunction by deposition of tio2nanowires on p-si substrate. the effect of system pressure and the current-voltage (i-v) characteristics of n-tio2/p-si hetrojunction were studied. the morphology of the samples was investigated by field emission scanning electron microscopy (fesem) which confirms formation of tio2 nanowires that their diameter...

Journal: :international journal of nanoscience and nanotechnology 2011
h. milani moghaddam

in this study, polyaniline molecule (emeraldine base) is modeled as a molecular wire and the effects of the metal/molecule coupling strength and the molecule length on the current-voltage (i-v) characteristics are numerically investigated. using a tight-binding hamiltonian model, the methods based on non-equilibrium green’s function theory, landauer formalism and newns-anderson model, our calcu...

This study reports the fabrication of n-TiO2/p-Si hetrojunction by deposition of TiO2nanowires on p-Si substrate. The effect of system pressure and the current-voltage (I-V) characteristics of n-TiO2/p-si hetrojunction were studied. The morphology of the samples was investigated by Field Emission Scanning Electron Microscopy (FESEM) which confirms formation of T...

2016
G. Baccarani M. Impronta B. Riccò P. Ferla

2014 The electrical properties of polycrystalline silicon resistors in the non-linear regime are examined. The adopted model is based on a thermionic-diffusion transport mechanism, and assumes charge trapping at the grain boundary. The theory closely fits experimental I-V characteristics, and allows for the determination of the average grain size. REVUE DE PHYSIQUE APPLIQUÉE TOME 13, DÉCEMBRE 1...

H. Milani Moghaddam

In this study, Polyaniline molecule (emeraldine base) is modeled as a molecular wire and the effects of the metal/molecule coupling strength and the molecule length on the current-voltage (I-V) characteristics are numerically investigated. Using a tight-binding Hamiltonian model, the methods based on Non-equilibrium Green’s function theory, Landauer formalism and Newns-Anderson model, our calcu...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه تربیت دبیر شهید رجایی 1389

چکیده فرض کنید sیک مجموعه ی ناتهی از رئوس گراف g(v ,e)باشد. در این صورت s?v را یک پیمان دفاعی گویند، هر گاه برای هر v?sتعداد همسایه ها در s حداقل به اندازه ی تعداد همسایه های v در v-s باشد. به عبارت دیگر s?v را یک پیمان را یک پیمان دفاعی گویند اگر برای هر v?s داشته باشیم: |n[v]?s|?|n[v]-s|. بنابراین هر رأس در یک پیمان دفاعی می تواند به کمک همسایگانش در s و خارج از s مورد حمایت و مورد دفاع وا...

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