Infrared photo detectors have vast and promising applications in military,industrial and other fields. In this paper, we present a method for improving theperformance of an infrared photodetector based on an InSb substance. To achieve goodperformance at high temperatures, thermal noise and intrusive currents should bereduced. For this purpose, a five-layer hetero structu...

This research has investigated epitaxial InSb, CdTe, MgCdTe, and CdTe/MgCdTe double heterostructures grown on InSb (100) substrates using molecular beam epitaxy. State-ofthe-art materials quality has been successfully achieved in all of these materials, which have demonstrated record narrow X-ray diffraction line-widths, ultra-low defect density, and record long minority carrier lifetime of ove...

Hybrid infrared focal plane arrays (IRFPAs) are more and more used in both infrared medium and long wavebands for many different applications. In order to offer more spatial resolution, larger format (2048×2048) start to be available, yet its final yield is so low that its cost is very high, and is not affordable. In this paper, basing on viscoplastic Anand’s model, the structural stress of ind...

It remains urgent to integrate conductive InSb colloidal quantum dots (CQDs) for sensitive and fast near-infrared (NIR) photodetection applications. Herein, nanocrystallized CQDs (<12 nm in diameter) have been successfully obtained via hot-injection procedure, demonstrated a very narrow absorption peak centered at 1406 with full width half maximum (FWHM) of 10.3 broader 1702 nm, indicating stro...

The first decade of the 21st-century has seen a rapid development in infrared photodetector technology. At the end of the last millennium there were two dominant IR systems, InSb- and HgCdTe-based detectors, which were well developed and available in commercial systems. While these two systems saw improvements over the last twelve years, their change has not nearly been as marked as that of the...

SIRTF requires detector arrays with extremely high sensitivity, limited only by the background irradiance. Especially critical is the near infrared spectral region around 3 μm, where the detector current due to the zodiacal background is a minimum. IRAC has two near infrared detector channels centered at 3.6 and 4.5 μm. We have developed InSb arrays for these channels that operate with dark cur...

The reticulated InSb pixel array was successfully employed in the design of large format InSb infrared focal plane arrays (IRFPAs) detector, to remove the thermal strain accumulated in InSb IRFPAs with the thermal shock test. In order to explore the deformation rules in the InSb IRFPAs with reticulated InSb pixel array, in light of the proposed equivalent modeling, a three-dimensional modeling ...

2014 Metal-Insulator-InSb structures, for infrared imaging devices operating in the charge injection mode, have been developed. The sensitivity of devices is conditioned by the generationrecombination processes occurring in the semiconductor. Several methods have been used to study these generation-recombination processes. C(t) experiments in depletion and inversion regime, conductance measurem...