نتایج جستجو برای: Indium Oxide

تعداد نتایج: 180743  

In this paper, the performance of an optical modulator based on indium tin oxide is investigated at telecommunication wavelength for different accumulation thickness. The plan of metal-oxide-semiconductor is utilized to change the carrier concentration at indium tin oxide-hafnium oxide interface. An optical mode solver based finite element method has been used to calculate the basic parameters ...

Journal: :iranian journal of chemistry and chemical engineering (ijcce) 2012
negin manavizadeh ali reza khodayari ebrahim asl soleimani sheyda bagherzadeh

the improvement of the physical properties of indium tin oxide (ito) layers is quite advantageous in photovoltaic applications. in this study the ito film is deposited by rf sputtering onto p-type crystalline silicon (c-si) with (100) orientation, multicrystalline silicon (mc-si), and glass substrates coated with zno and annealed in vacuum furnace at 400°c. electrical, optical, structural and m...

2014
Jaeman Jang Dae Geun Kim Dong Myong Kim Sung-Jin Choi Jun-Hyung Lim Je-Hun Lee Yong-Sung Kim Byung Du Ahn Dae Hwan Kim

Articles you may be interested in A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination Instability of amorphous hafnium-indium-zinc-oxide thin film transistors under negative-bias-illumination stress Appl. Investigation of zinc interstitial ions as the origin of anomalo...

2008
JONGMAN KIM HARRY SCHOELLER JUNGHYUN CHO SEUNGBAE PARK

The fluxless solderability of pure indium on gold-coated surfaces is investigated in this study using measurements of wetting angle and joint strength. This study focuses on the effects of indium s native oxides and those which form during heat treatment. The initial oxide thicknesses are obtained by heating indium samples at various temperatures, and then, during the reflow above the melting t...

2015
Jun Tae Jang Jozeph Park Byung Du Ahn Dong Myong Kim Sung-Jin Choi Hyun-Suk Kim Dae Hwan Kim

Articles you may be interested in Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors Appl. Temperature dependence of negative bias under illumination stress and recovery in amorphous indium galli...

2009
S. H. Mohamed F. M. El-Hossary

Indium tin oxide thin films with different thicknesses were deposited on polymer substrates, held at room temperature, using electron beam evaporation. The dependence of structural properties, optical properties and room temperature resistivity on the indium tin oxide film thickness was studied. X-ray diffraction illustrates the amorphous structure for all the indium tin oxide prepared films. T...

2014
Manu Sharma

Indium doped zinc oxide hierarchical nanostructures have been synthesized using a simple aqueous solution based method. A change in morphology from hierarchical nanostructures in ZnO to nanorods after doping with indium has been observed. The optical properties of nanostructures have been investigated using diffuse reflectance and photoluminescence spectroscopy. The band gap of zinc oxide nanop...

Journal: :journal of nanostructures 0
ashish karn st. anthony falls laboratory, university of minnesota twin cities, minneapolis, mn, usa nitesh kumar yale university, whitney avenue, new haven, ct, usa sivanandam aravindan indian institute of technology delhi, hauz khas, new delhi, india

the current study reports some interesting growth of novel in2o3 nanostructures using ambient-controlled chemical vapor deposition technique in the presence of a strongly reducing hydrazine ambient. the experiments are systematically carried out by keeping either of the carrier gas flow rate or the source temperature constant, and varying the other. for each of the depositions, the growth is st...

2013
Anand Jain Jack O Connolly Robert Woolley Satheesh Krishnamurthy

Extracellular electron transfer mechanism in Shewanella loihica PV4 biofilms formed at indium tin oxide and graphite electrodes. Journal Article How to cite: Jain, Anand; O Connolly, Jack; Woolley, Richard; Krishnamurthy, Satheesh and Marsili, Enrico (2013). Extracellular electron transfer mechanism in Shewanella loihica PV4 biofilms formed at indium tin oxide and graphite electrodes. Internati...

2014
Hongxing Dong Zhanghai Chen Liaoxin Sun Jian Lu Wei Xie H. Hoe Tan Chennupati Jagadish Xuechu Shen

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