We present the design and simulation of a single-walled carbon nanotube(SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, theself-heating effect modeling of the CNT MOSFET structure is performed and comparedwith conventional MOSFET structure having same channel length. The numericalresults are presented to show the self-heating effect on the I...

Low-power, compact, and highperformance NP dynamic CMOS circuits are presented in this paper assuming a 16 nm carbon nano tube transistor technology. The performances of two-stage pipeline 32-bit carry lookahead adders are evaluated based on HSPICE simulation with the following four different implementations: silicon MOSFET (Si-MOSFET) domino logic, Si-MOSFET NP dynamic CMOS, carbon nanotube MO...

This paper discusses the type of capacitances for Single Gate MOSFET and Double Gate MOSFET including their quantity. The effect of parasitic capacitance makes double gate MOSFET more suitable component for the designing of digital logic switches than single gate MOSFET. Here, we introducing Independent double gate MOSFET operation based on VeSFET concept. Then introducing with the total capaci...

High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device has a retrograde channel to achieve high output current. For this purpose, abrupt retrograde channel and Gaussian retrograde channels have bee...

According to Moore’s law, the number of transistor embedded on integrated circuit (IC) doubles approximately every two years. Thus, the size of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has to be scaled down as an increase in packing density. In current technology, the size of a transistor has shrunk below 45nm, and it has already reached its physical limit. Any attempt to shri...

In this work, a novel Silicon on Insulator (SOI) MOSFET is proposed and investigated. The drain and source electrode structures are optimized to enhance ON-current while global device temperature and hot carrier injection are decreased. In addition, to create an effective heat passage from channel to outside of the device, a silicon region has embedded in the buried oxide. In order to reduce th...

When in vivo proton dosimetry is performed with a metal-oxide semiconductor field-effect transistor (MOSFET) detector, the response of the detector depends strongly on the linear energy transfer. The present study reports a practical method to correct the MOSFET response for linear energy transfer dependence by using a simplified Monte Carlo dose calculation method (SMC). A depth-output curve f...

This paper focuses on the role of the power MOSFET in achieving high-efficiency converter design. It provides a brief overview of current low-voltage MOSFET trench technologies, along with a discussion about onresistance versus gate charge trade-offs for MOSFETs optimized for use as control or synchronous switches. It covers the importance of the integrated Schottky diode (SyncFETTM MOSFET) in ...

Bulk-driven MOSFET technique meets the low-voltage and low-power requirements demanded in the modern analog circuit design. Due to submicron/nanometer technologies and critical short-channel effects, choosing a suitable MOSFET model for circuit design becomes increasingly important. However, the conventional MOSFET models normally set up for the typical gate-driven applications may not perform ...