As the scaling of Si MOSFET approaches towards its limiting value, new alternatives are coming up to overcome these limitations. In this paper first we have reviewed carbon nanotube field effect transistor (CNTFET) and types of CNTFET. We have then studied the effect of channel length and chirality on the drain current for planer CNTFET. The Id~Vd curves for planer CNTFETs having different chan...

The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...

In this paper, we have design of ternary 2x2 Sram memory Array using carbon Nano-tube field-effect transistors (CNTFETs).the CNTFET technology has new parameters and characteristics which determine the performances such as current driving capability, speed, power consumption and area of circuits have been proposed for ternary 2x2 Sram memory array is needed to optimize performance using CNTFET ...

The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...

Abstract This paper proposes a design of gate all around CNTFET based ternary content addressable memory (TCAM). TCAM cell is designed and simulated in HSPICE using top gated (TG-CNTFET) & CNTTFET (GAA-CNTFET). Dual chirality technique used to i.e. different for n-type p-type which utilizes threshold voltages hence improve the performance. Comparative analysis has been done various paramete...

By coating a thin layer of photosensitive polymer such as poly3-octylthiophene-2,5-diyl (P3OT), the Carbon Nanotube Field Effect Transistor (CNTFET) provides an optical gating phenomenon [1]. It is called Optical-Gated CNTFET (OG-CNTFET or OGCNTFET). Compared to the conventional CNTFET, the OG-CNTFET reveals a right hand shift of the drain current vs. gate bias voltage. If this device is under ...

Suckling-age rats display endogenous circadian rhythmicity of metabolic rate (MR) with energy-saving, torpor-like decreases, which are sympathetically controlled and suppressed by leptin treatment. We investigated whether neonatal monosodium glutamate (MSG) treatment, known to cause arcuate nucleus damage and adult-age obesity, alters energy balance in the first two postnatal weeks. Continuousl...

Multipliers are one of the most important components in microprocessors and DSP processors [9]. Baugh Wooley is one among them and it is an array multiplier. Array multipliers have a more regular layout and it presents high speed performance. The paper deals with the design of a Baugh Wooley multiplier using Carbon Nanotube Field Effect Transistor (CNTFET). A Verilog-A formulation of the Stanfo...

Ternary logic system is the most promising and pursued alternative to prevailing binary systems due energy efficiency of circuits following reduced circuit complexity chip area. In this paper, we have proposed a ternary 3-Transistor Dynamic Random-Access Memory (3 T-DRAM) cell using single word-line for both read write operations. For simulation circuit, used Carbon-Nano-Tube Field Effect Trans...

Carbon Nanotube Field Effect Transistor (CNTFET) has a wide scope in the field of Nanotechnology. These are currently considered as the replacement to the Si MOSFET. These devices show the ballistic transport in the current conduction. In this paper, a Verilog-A formulation of the Stanford compact model is used for the simulation of different logic gates in Cadence and finally Mod-16 Counter is...