نتایج جستجو برای: Nanolayer

تعداد نتایج: 299  

Journal: :Faraday discussions 2014
Haining Chen Zhanhua Wei Keyou Yan Ya Yi Jiannong Wang Shihe Yang

Hybrid organic/inorganic perovskite solar cells are attracting intense attention and further developments largely hinge on understanding the fundamental issues involved in the cell operation. In this paper, a liquid phase deposition (LPD) method is developed to design and grow a TiO(2) nanolayer at room temperature for carbon-based perovskite solar cells. The TiO(2) nanolayer grown on FTO glass...

2016
Kyong-Hoon Choi Jung-Gil Kim Byungman Kang Ho-Joong Kim Bong Joo Park

We developed a two-step chemical bonding process using photosensitizer molecules to fabricate photofunctional nanolayer coatings on hematoporphyrin- (HP-) coated Ti substrates. In the first step, 3-aminopropyltriethoxysilane was covalently functionalized onto the surface of the Ti substrates to provide heterogeneous sites for immobilizing the HP molecules. Then, HP molecules with carboxyl group...

2009
M. Izadi S. Hossainpour D. Jalali - Vahid

Nanofluids are novel fluids that are going to have an important role in future industrial thermal device designs. Studies are being predominantly conducted on the mechanism of these heat transfers. The key to this attraction is in the increase in thermal conductivity brought about by the Nanofluids compared with the base fluid. Different models have been proposed for calculation of effective th...

2012
M. Izadi S. Hossainpour D. Jalali - Vahid

Nanofluids are novel fluids that are going to have an important role in future industrial thermal device designs. Studies are being predominantly conducted on the mechanism of these heat transfers. The key to this attraction is in the increase in thermal conductivity brought about by the Nanofluids compared with the base fluid. Different models have been proposed for calculation of effective th...

2013
Yuan-Chang Liang Hua Zhong Wen-Kai Liao

(La,Sr)MnO3 (LSMO) nanolayers with various crystallographic textures were grown on the sapphire substrate with and without In2O3 epitaxial buffering. The LSMO nanolayer with In2O3 epitaxial buffering has a (110) preferred orientation. However, the nanolayer without buffering shows a highly (100)-oriented texture. Detailed microstructure analyses show that the LSMO nanolayer with In2O3 epitaxial...

In this investigation, Ti/TiN nanolayer and TiN single layer coatings were coated on substrate of AISI 316L stainless steel by applying physical vapor deposition (PVD) using the type of cathodic arc evaporation (CAE). The evaluation of microstructure were carried out using x-ray diffraction (XRD), nanoindentation, atomic force microscopy (AFM) as well as scanning electron microscopy (SEM). Pola...

2016
Ryan Beardsley Andrey V. Akimov Jake D. G. Greener Garry W. Mudd Sathyan Sandeep Zakhar R. Kudrynskyi Zakhar D. Kovalyuk Amalia Patanè Anthony J. Kent

Van der Waals (vdW) layered crystals and heterostructures have attracted substantial interest for potential applications in a wide range of emerging technologies. An important, but often overlooked, consideration in the development of implementable devices is phonon transport through the structure interfaces. Here we report on the interface properties of exfoliated InSe on a sapphire substrate....

2013
Amit Prakash Siddheswar Maikap Hsien-Chin Chiu Ta-Chang Tien Chao-Sung Lai

References 1. Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/ TaOx interface. Nanoscale Research Letters 2013, 9:152. 2. Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/ TaOx interface. Nanoscale Research L...

2012
Sheikh Ziaur Rahaman Siddheswar Maikap Ta-Chang Tien Heng-Yuan Lee Wei-Su Chen Frederick T Chen Ming-Jer Kao Ming-Jinn Tsai

Excellent resistive switching memory characteristics were demonstrated for an Al/Cu/Ti/TaOx/W structure with a Ti nanolayer at the Cu/TaOx interface under low voltage operation of ± 1.5 V and a range of current compliances (CCs) from 0.1 to 500 μA. Oxygen accumulation at the Ti nanolayer and formation of a defective high-κ TaOx film were confirmed by high-resolution transmission electron micros...

2016
Zhong-Mei Huang Wei-Qi Huang Tai-Ge Dong Gang Wang Xue-Ke Wu

It is very interesting that the enhanced peaks near 1150 and 1550 nm are observed in the photoluminescence (PL) spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level system with quantum dots (QDs) pumping and emission of quasi-direct-gap band, in our experiment. In the preparing process of Si-Ge nanolayer structure by using a pulsed...

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