نتایج جستجو برای: Nanometric SiC

تعداد نتایج: 14661  

Journal: :journal of nanostructures 2015
f. shahi m. akbarzadeh pasha a. a. hosseini z. s. arabshahi

nanometric carbid silicon (sic) supported monometallic and bimetallic catalysts containing fe, co, ni transition metals were prepared by wet impregnation method. multiwall carbon nanotubes (mwcnts) were synthesized over the prepared catalysts from catalytic decomposition of acetylene at 850°c by thermal chemical vapor deposition (tcvd) technique. the synthesized nanomaterials (catalysts and cnt...

2011
Saurav Goel Xichun Luo Robert L Reuben Waleed Bin Rashid

Cubic silicon carbide (SiC) is an extremely hard and brittle material having unique blend of material properties which makes it suitable candidate for microelectromechanical systems and nanoelectromechanical systems applications. Although, SiC can be machined in ductile regime at nanoscale through single-point diamond turning process, the root cause of the ductile response of SiC has not been u...

A. A. Hosseini F. Shahi M. Akbarzadeh Pasha, Z. S. Arabshahi

Nanometric Carbid Silicon (SiC) supported monometallic and bimetallic catalysts containing Fe, Co, Ni transition metals were prepared by wet impregnation method. Multiwall carbon nanotubes (MWCNTs) were synthesized over the prepared catalysts from catalytic decomposition of acetylene at 850°C by thermal chemical vapor deposition (TCVD) technique. The synthesized nanomaterials (catalysts and CNT...

2011
M. Khoeini

The densification response of aluminium powder reinforced with nanometric SiC particles (50 nm) during uniaxial compaction was studied. To determine the effect of SiC nanoparticles on the compressibility of the matrix, monolithic Al powder was also examined. The effect of SiC nanoparticles on the densification mechanisms, i.e. particle rearrangement and plastic deformation, was analysed using m...

2016
I. Razado-Colambo J. Avila J.-P. Nys C. Chen X. Wallart M.-C. Asensio D. Vignaud

The structural and electronic properties of twisted bilayer graphene (TBG) on SiC(000) grown by Si flux-assisted molecular beam epitaxy were investigated using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy with nanometric spatial resolution. STM images revealed a wide distribution of twist angles between the two graphene layers. The electronic structure recor...

Journal: :The International Journal of Advanced Manufacturing Technology 2021

Experimentally revealing the nanometric deformation behavior of 3C-SiC is challenging due to its ultra-small feature size for brittle-to-ductile transition. In present work, we elucidated cutting mechanisms by performing in situ experiments under scanning electron microscope (SEM), as well post-characterization back-scattered diffraction (EBSD) and transmission microscopy (TEM). particular, a n...

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