silicon nanowire (sinw) arrays were produced by electroless method on polycrystalline si substrate, in hf/ agno3 solution. although the monocrystalline silicon wafer is commonly utilized as a perfect substrate, polycrystalline silicon as a low cost substrate was used in this work for photovoltaic applications. in order to study the influence of etching time (which affects the sinws length) on d...

We investigate spin polarized electron transport in ultra-thin Si-Core/Ge-Shell and GeCore/Si-Shell nanowire system using semi-classical Monte Carlo simulation method. Depolarization of electron’s spin occurs in nanowire mainly due to D’yakonov-Perel dephasing (DP-mechanism) and Elliott-Yafet dephasing (EY-mechanism). We studied the dependence of spin dephasing on ultra-thin silicon core diamet...

Optical properties are numerically investigated for vertically aligned silicon nanowire arrays with three types of structural randomness, i.e., random position, diameter, and length. Nanowire arrays with random position show slight absorption enhancement, while those with random diameter or length show significant absorption enhancement, which is attributed to the stronger optical scattering in...

We have modeled the field and space charge distributions in back-gate and top-gate nanowire field effect transistors by solving the three-dimensional Poisson's equation numerically. It is found that the geometry of the gate oxide, the semiconductivity of the nanowire, and the finite length of the device profoundly affect both the total amount and the spatial distribution of induced charges in t...

We report a general method for reliably fabricating quasi-one-dimensional superconducting nanowire arrays, with good control over nanowire cross section and length, and with full compatibility with device processing methods. We investigate Nb nanowires with individual nanowire cross sectional areas that range from bulklike to 10 x 11 nm, and with lengths from 1 to 100 microm. Nanowire size effe...

The nonequilibrium molecular dynamics (NEMD) method has been used to calculate the lattice thermal conductivities of Ar and Kr/Ar nanostructures in order to study the effects of interface scattering, boundary scattering, and elastic strain on lattice thermal conductivity. Results show that interface scattering poses significant resistance to phonon transport in superlattices and superlattice na...

As metal-oxide-semiconductor field-effect transistors (MOSFETs) channel lengths (L g) are scaled to lengths shorter than L g < 8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario, a heavier transport mass can be used to limit source-drain (S-D) tunneling. Taking InAs and Si as examples, it is shown that different heavier transport masses can be eng...

Due to the large surface to volume ratio in nanowires, small changes in surface condition result in large changes in current–voltage characteristics. As a consequence, the overlap of the end-wire contact with the oxide-covered surface along the length of the nanowire can have a significant effect on the current–voltage characteristics of the wire. We present TCAD studies of this effect. One of ...

In this paper characterization on optical properties of silicon nanowire arrays has been made. Nanowire array has potential applications in solar cells. The effects of wire length and wavelength on the Transmission and reflection properties of nanowire arrays have been simulated. The analysis of simulated resulted has also been presented.

Silicon nanowire (SiNW) arrays were produced by electroless method on polycrystalline Si substrate, in HF/ AgNO3 solution. Although the monocrystalline silicon wafer is commonly utilized as a perfect substrate, polycrystalline silicon as a low cost substrate was used in this work for photovoltaic applications. In order to study the influence of etching time (which affects the SiNWs length) on d...