a comprehensive study of schottky barrier mosfet (sbmosfet) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within non-equilibrium green's function formalism. quantum confinement increases the effective schottky barrier height (sbh). (100) orientation provides lower effective schottky barrier height in comparison ...

abstract: this paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (gnrfet). the results illustrate that the gnrfet under high temperature (ht-gnrfet) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay ...

The intense investigations of molecular devices, as an alternative to standard electronics components, underlines the need to model the conduction mechanisms of nano-scale conductors. In addition to measurements of the elastic conductance through point-contacts, atomic-wires and molecules, recent experiments have shown inelastic tunneling currents through, for example, a hydrogen molecule attac...

Self assembled quantum dots have shown a great promise as a leading candidate for infrared detection at room temperature. In this paper, a theoretical model of the absorption coefficient of quantum dot devices is presented. Both of bound to bound absorption and bound to continuum absorption are taken into consideration in this model. This model is based on the effective mass theory and the Non ...

Non-equilibrium Green’s function (NEGF) is a general method for modeling non-equilibrium quantum transport in open mesoscopic systems with many body scattering effects. In this paper, we present a unified treatment of quantum device boundaries in the framework of NEGF with both finite difference and finite element discretizations. Boundary treatments for both types of numerical methods, and the...

Exceptional electronic and mechanical properties together with nanoscale diameter make carbon nanotubes (CNTs) promising candidates for nanoscale transistors. Semiconducting CNTs can be used as a channel for field-effect transistors (FETs), and metallic CNTs can serve as interconnect wires. In short devices carrier transport through the device is nearly ballistic [1]. The non-equilibrium Green’...

Due to their small size and unique properties, single-molecule electronics have long seen research interest from experimentalists theoreticians alike. From a theoretical standpoint, modeling these systems using electronic structure theory can be difficult due the importance of electron correlation in determination molecular this computationally expensive consider, particularly multiconfiguratio...

D.G. Walker Department of Mechanical Engineering, Vanderbilt University, Nashville, Tennessee 37212, USA Abstract Variably spaced semiconductor superlattice (VSSL) have exhibited superior electron mobility and rectification because of electronic level alignment. We have investigated the thermoelectric properties of VSSL structures using a self-consistent non-equilibrium Green’s function (NEGF) ...

In this paper, the performance of a CNT-JLTFET under different values of torsional strains of 0, 3, and 5 degrees has been investigated. Simulation has been carried out using non-equilibrium Green’s function (NEGF) formalism in the mode-space approach and in the ballistic limit. The simulation results indicate that, under torsional strain, an increase occurs in the energy band-gap, and thus the...