in this study, the geometries of the [sininhn]q and [sicunhn]q clusters, (n = 4,5,6 and q = 0,+1,-1) complexes have been optimized to form complexes with four, five and six planar and nonplanarsubstituents, with negative, neutral or positive atomic charge, using density functionaltheory (dft) at b3lyp/6-311+g (3df, p) computational level and then their thermodynamicstability were investigated b...

In this work, textured, well-faceted ZnO materials grown on planar Si(100), planar Si(111), and textured Si(100) substrates by low-pressure chemical vapor deposition (LPCVD) were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and cathode luminescence (CL) measurements. The results show that ZnO grown on planar Si(100), planar Si(111), and...

In this work, n-GZO/a:amorphous-Si(i:intrinsic)/p( + )-Si photodiodes are fabricated. We employed a nanosphere lithographic technique to obtain nanoscale patterns on either the a-Si(i) or p( + )-Si surface. As compared with the planar n-GZO/p( + )-Si diode, the devices with nanopatterned a-Si(i) and nanopatterned p( + )-Si substrates show a 32% and 36.2% enhancement of photoresponsivity. Furthe...

The dark electrocatalytic and light photocathodic hydrogen evolution properties of Ni, Ni–Mo alloys, and Pt on Si electrodes have been measured, to assess the viability of earth-abundant electrocatalysts for integrated, semiconductor coupled fuel formation. In the dark, the activities of these catalysts deposited on degenerately doped p-Si electrodes increased in the order Ni < Ni–Mo # Pt. Ni–M...

This work presents an experimental and finite difference time domain (FDTD) simulation-based study on the application of graphene as a transparent conducting layer on a planar and untextured crystalline p-n silicon solar cell. A high-quality monolayer graphene with 97% transparency and 350 Ω/□ sheet resistance grown by atmospheric pressure chemical vapor deposition method was transferred onto p...

Silicon nanowires (Si NWs) terminated with hydrogen atoms exhibit higher activation energy under ambient conditions than equivalent planar Si(100). The kinetics of sub-oxide formation in hydrogen-terminated Si NWs derived from the complementary XPS surface analysis attribute this difference to the Si-Si backbond and Si-H bond propagation which controls the process at lower temperatures (T < 200...

We study the problem of routing symmetric demand pairs in planar digraphs. The input consists of a directed planar graph G = (V, E) and a collection of k source-destination pairs M = {s1t1, . . . , sktk}. The goal is to maximize the number of pairs that are routed along disjoint paths. A pair siti is routed in the symmetric setting if there is a directed path connecting si to ti and a directed ...

The molecule in the structure of the title compound, C34H60Si4, lies on a twofold rotation axis that passes through the two Si atoms, resulting in a planar cyclo-tetra-silane ring. The dihedral angle between the cyclo-tetra-silane ring and the phenyl ring is 68.20 (5)°. The Si-Si bonds [2.4404 (8) and 2.4576 (8) Å] are longer than a standard Si-Si bond (2.34 Å) and the C-Si-C bond angle [97.07 ...

In this paper we reported the results on the low-temperature thermal oxidation of Si nanowires. Various polygon-shaped Si nanowires with linewidths between 100 and 300 nm were fabricated on Si/Si1ÿxGex=Si heterostructure substrates by using lithography, reactive ion etching, and subsequent selective chemical etching. We find that oxidized Si nanowires following 750 and 775 C wet oxidation will ...