نتایج جستجو برای: QCA1 gate

تعداد نتایج: 42907  

Today, the use of CMOS technology for the manufacture of electronic ICs has faced many limitations. Many alternatives to CMOS technology are offered and made every day. Quantum-dot cellular automata (QCA) is one of the most widely used. QCA gates and circuits have many advantages including small size, low power consumption and high speed. On the other hand, using special digital gates called re...

Journal: :international journal of nanoscience and nanotechnology 2014
m. kianpour r. sabbaghi-nadooshan

application of quantum-dot is a promising technology for implementing digital systems at nano-scale.  quantum-dot cellular automata (qca) is a system with low power consumption and a potentially high density and regularity. also, qca supports the new devices with nanotechnology architecture. this technique works based on electron interactions inside quantum-dots leading to emergence of quantum ...

In this paper, novel hybrid MOSFET(HMOS) structure has been proposed to reduce the gate leakage current drastically. This novel hybrid MOSFET (HMOS) uses source/drain-to-gate non-overlap region in combination with high-K layer/interfacial oxide as gate stack. The extended S/D in the non-overlap region is induced by fringing gate electric field through the high-k dielectric spacer. The gate leak...

In advance longwall mining, the safety of mine network, production rate, and consequently, economic conditions of a mine are dependent on the stability conditions of gate roadways. The gate roadway stability is a function of two important factors: 1) characteristics of the excavation damaged zone (EDZ) above the gate roadway and 2) loading effect due to the caving zone (CZ) above the longwall w...

In this paper, we propose a new heterostructure dual material gate junctionless field-effect transistor (H-DMG-JLFET), with negative differential resistance (NDR) characteristic. The drain and channel material are silicon and source material is germanium. The gate electrode near the source is larger. A dual gate material technique is used to achieve upward band bending in order to access n-i-p-...

Journal: Journal of Nanoanalysis 2020

In this paper, the electrical performance of double gate organic field effecttransistor (DG-OFET) are thoroughly investigated and feasibility of the deviceas an efficient biosensor is comprehensively assessed. The introduced deviceprovides better gate control over the channel, yielding better charge injectionproperties from source to channel and providing higher on-state...

Journal: :journal of mining and environment 2016
h. mohammadi m. a. ebrahimi farsangi h. jalalifar a. r. ahmadi a. javaheri

in advance longwall mining, the safety of mine network, production rate, and consequently, economic conditions of a mine are dependent on the stability conditions of gate roadways. the gate roadway stability is a function of two important factors: 1) characteristics of the excavation damaged zone (edz) above the gate roadway and 2) loading effect due to the caving zone (cz) above the longwall w...

Journal: :international journal of advanced biological and biomedical research 2015
hadi taleshi ahangari ali ghanbari nasroallah moradi kor

objective: different categories are available for estimating of radiation dose. radioisotopes with the same energy and almost the same physical properties have similar effects. monte carlo technique is a computerized method based on mathematical simulation of physical processes. the main purpose of this study is to show that beta particles are not able to penetrate deep into the water. also dif...

پایان نامه :دانشگاه بین المللی امام خمینی (ره) - قزوین - دانشکده علوم پایه 1392

in this thesis,spin dependend transport and electron transport through of ng/sg(graphene/ superconductor graphen) are studied in the junction of ng/fgt/sg. due to andreev reflection conductance increases in the presence of superconductor graphene.also, by applying a voltage gate on a superconductor, fermi level shifts and the conductance is independent of ferromagnatic substrate. also, the cond...

امنیت‌طلب, مهدی, سعادتی‌نیاری, مقصود, میرمهدی, محسن, نادرعلی, رحیم,

We propose a robust scheme, using tripod stimulated Raman adiabatic passage, to generate one-qubit rotation gate. In this scheme, a four-level atom interacts with three resonant laser pulses and time evolution of the corresponding coherent system is designed such that the rotation gate is implemented at the end of process. Rotation angle in this gate is holonomic and has a geometrical basis in ...

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