نتایج جستجو برای: Radio Frequency Plasma Discharge Silicon
تعداد نتایج: 1050939 فیلتر نتایج به سال:
In this paper, the effects of plasma discharge parameters on the nano particles formation process in a plasma enhanced chemical vapor deposition (PECVD) reactor using a model based on equations of ionization kinetics for different active species are studied. A radio frequency applied electric field causes ionization inside the reactor and consequently different reaction schemically active speci...
Introduction The synthesis of single-crystal silicon nanocrystals we present is performed in the gas phase of a radio frequency (rf) discharge. The plasma is produced in a discharge box, enclosed in a vacuum vessel, containing an Ar/SiH4 mixture (92:8). The typical pressure is 0.12 mbar while typical rf injected power is 10 W. Gas temperature can be decreased to -40 oC. Dust particle formation ...
Articles you may be interested in OH radicals distribution in an Ar-H2O atmospheric plasma jet Influence of ambient air on the flowing afterglow of an atmospheric pressure Ar/O2 radiofrequency plasma Investigating the role of hydrogen in silicon deposition using an energy-resolved mass spectrometer and a Langmuir probe in an Ar/H2 radio frequency magnetron discharge Hydrogenated-amorphous carbo...
Silicon nitride is the most commonly used passivation layer in biosensor applications where electronic components must be interfaced with ionic solutions. Unfortunately, the predominant method for functionalizing silicon nitride surfaces, silane chemistry, suffers from a lack of reproducibility. As an alternative, we have developed a silane-free pathway that allows for the direct functionalizat...
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A continuous oxygen plasma operating at a radio frequency power of 800 W and a pressure of 2 mTorr has been created in a helicon diffusion reactor used for the deposition of silicon dioxide films. An energy selective mass spectrometer and a Langmuir probe attached to the wall of the silica covered aluminum diffusion chamber below the source have been used to characterize the plasma @ion energy ...
ZnO nanostructure films were deposited by radio frequency (RF) magnetron sputtering on etched silicon (100) substrates using dry Ar/SF6 plasma, at two etching times of 5 min and 30 min, and on non etched silicon surface. Energy dispersive X-ray (EDX) technique was employed to investigate the elements contents for etched substrates as well as ZnO films, where it is found to be stoichiometric. Su...
In this paper, a review on microplasma discharges is conducted. The different types and configurations used in microplasmas such as the Cathode Boundary Layer (CBL), Dielectric Barrier Discharge (DBD), Capillary Plasma Electrode Discharge (CPED), Inverted Square Pyramid (ISP), Square Cross Sectional Cavities (SCSC), Radio Frequency Inductively Coupled Discharge (RFIC), Radio Frequency Capacitiv...
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