نتایج جستجو برای: SIC

تعداد نتایج: 13123  

Journal: :مهندسی متالورژی و مواد 0
شهلا ترابی حبیب دانش منش محمد محسن مشکسار

the accumulative roll bonding process is used as a severe plastic deformation technique to produce aluminum composite sheets with ultra fine structure. in this study the effect of simultaneous use mg and sic particles as reinforcements, on the tensile properties of the al-mg-sic hybrid compositeis studied. the al-mg-sic hybrid composites with different amounts of mg and sic contents were fabric...

Journal: :international journal of nanoscience and nanotechnology 2014
m. azadmand k. arzani a. nemati n. riahi noori t. ebadzadeh

in this research the influence of adding sic on microstructure and electrical properties of zno-based nanocomposite varistors were investigated. sic was added with amounts of 10-0 mass% to zno-based varistor composition. it is found that sic allows reaching to high threshold voltage with formation of fine-grained zno.another important effect of adding sic is formation zn2sio4 (willemite) on the ...

2016
Qingyang Fan Changchun Chai Qun Wei Yintang Yang

A systematic investigation of structural, mechanical, anisotropic, and electronic properties of SiC₂ and SiC₄ at ambient pressure using the density functional theory with generalized gradient approximation is reported in this work. Mechanical properties, i.e., the elastic constants and elastic modulus, have been successfully obtained. The anisotropy calculations show that SiC₂ and SiC₄ are both...

2017
Yeon-Tae Yu Gautam Kumar Naik Young-Bin Lim Jeong-Mo Yoon

The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder ...

2012
Remigijus Vasiliauskas

Current advancement in electronic devices is so rapid that silicon, the semiconductor material most widely used today, needs to be replaced in some of the fields. Silicon carbide (SiC) is a wide band gap semiconductor satisfying requirements to replace silicon in devices operating at high power and high frequency at elevated temperature, and in harsh environments. Hexagonal polytypes of SiC, su...

Journal: :journal of physical and theoretical chemistry 0
mahdi rezaei sameti department of physical chemistry, faculty science, malayer university, malayer m. rakhshi department of chemistry, university of kashan, kashan, iran

in the present study we focused on the electronic and structural properties of na and mg adsorption on the surface of the (6, 6) armchair sicnts. the adsorption energy (eads), band gap energy (eg), partial density of state (pdos), chemical potential (μ), global hardness (η), electrophilicity index (ω), global softness (s), work function values (φ) and work function change (δφ) are calculated by...

2013
Amir Kalev Gilad Gour

We construct the set of all general (i.e. not necessarily rank 1) symmetric informationally complete (SIC) positive operator valued measures (POVMs), and thereby show that SIC-POVMs that are not necessarily rank 1 exist in any finite dimension d. In particular, we show that any orthonormal basis of a real vector space of dimension d 2 − 1 corresponds to some general SIC POVM and vice versa. Our...

2006
Y. Katoh L. L. Snead T. Nozawa N. B. Morley W. E. Windes

Ceramic matrix composites (CMC’s), particularly silicon carbide (SiC) fiber-reinforced SiC-matrix (SiC/SiC) composites, have been studied for advanced nuclear energy applications for more than a decade. The perceived potentials for advanced SiC/SiC composites include the ability to operate at temperature regimes much higher than heat-resistant alloys, the inherent low inducedactivation nuclear ...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه تبریز - دانشکده مکانیک 1394

در این پژوهش کامپوزیت های سرامیکی sic zrb2–25 vol% به منظور بررسی تاثیر متغیرهای فرآیند (دما، زمان و فشار پرس گرم) و اندازه ذره sic (20 نانومتر، 200 نانومتر و 5 میکرومتر) روی رفتارچگال شدن، متوسط اندازه دانه zrb2 و سختی ویکرز ساخته شدند. یک روش طراحی آزمایش (روش تاگوچی) برای شناسایی میزان تاثیر هر یک از متغیرها و همچنین تعیین شرایط بهینه مورد استفاده قرار گرفت. بر اساس تحلیل های آماری فشار و دم...

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