Yiwei Xie1, Leimeng Zhuang1, Ronald Broeke2, Qibing Wang1, Binhuang Song1, Zihan Geng1, and Arthur James Lowery1,3 1Electro-Photonics Laboratary, Dept. of Elec. and Computer Sys. Eng., Monash University, Wellington Road, Clayton VIC 3800, Australia 2Bright Photonics BV, Maarssen 3604 CE, The Netherlands 3Centre for Ultrahigh-bandwidth Devices for Optical Systems (CUDOS), Australia E-mail addres...

SOI means Silicon on Insulator. This type of transistors has Silicon-Insulator-Silicon substrate which is different from conventional MOSFET structure where metal layer is used on the top of Insulator [1, . Now a days, the width of the oxide of a MOSFET is reduced from 300nm to 1.2nm and even less with scaling in technology. If it is further reduced, the leakage problems (majorly Sub-threshold ...

An overview of the present silicon-on-insulator (SOI) waveguide technology is given and supplemented with an extensive set of theory and simulation results. Characteristics of slab-, rectangularand ridge waveguides in SOI are explained. In particular, the number of modes and the single-mode conditions are carefully analyzed. Experimental work with straight and bent 8 to 10 μm thick SOI ridge wa...

Mechanical bending is ubiquitous in heteroepitaxial growth of thin films where the strained growing film applies effectively an “external” stress to bend the substrate. Conventionally, when the deposited film is much thinner than the substrate, the bending increases linearly with increasing film thickness following the classical Stoney formula. Here we analyze the bending of ultrathin nanometer...

An ion transport code was developed for simulating ionization energy deposition by energetic ions in sensitive volumes of complex structures. The code was used to simulate recent microdosimetry measurements performed with silicon-on-insulator (SOI) microdosimeters in Fast Neutron Therapy (FNT).

This paper reports on the design and implementation of an in-plane solid-mass single-crystal silicon tuning fork gyro that has potential to achieve inertial-grade performance. A novel design is devised to achieve high Q in the drive and sense resonant modes (Qdrive=84,000 and Qsense=64,000) with effective decoupling. The gyroscope was fabricated on 40μm SOI using a two-mask process. The drive a...

Optomechanical circuits are a promising candidate to realize various signal processing functions on a chip. In this paper we review several different NOMS structures fabricated in a silicon-on-insulator platform. © 2010 Optical society of America OCIS-codes: (130.3120) Integrated optics devices; (250.4745) Optomechanics