The photocurrent conversions of transition metal dichalcogenide nanosheets are unprecedentedly impressive, making them great candidates for visible range photodetectors. Here we demonstrate a method for fabricating micron-thick, flexible films consisting of a variety of highly separated transition metal dichalcogenide nanosheets for excellent band-selective photodetection. Our method is based o...

Articles you may be interested in Role of strain on electronic and mechanical response of semiconducting transition-metal dichalcogenide monolayers: An ab-initio study Electronic and thermoelectric properties of few-layer transition metal dichalcogenides Computational study on electrical properties of transition metal dichalcogenide field-effect transistors with strained channel Band alignment ...

Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transitio...

We report a transient absorption study of photocarrier dynamics in transition metal dichalcogenide alloy, Mo0.5W0.5S2. Photocarriers were injected by a 400-nm pump pulse and detected by a 660-nm probe pulse. We observed a fast energy relaxation process of about 0.7 ps. The photocarrier lifetime is in the range of 50 - 100 ps, which weakly depends on the injected photocarrier density and is a fe...

Moir\'e superlattices formed in two-dimensional semiconductor heterobilayers provide a new realization of Hubbard model physics which the number electrons per effective atom can be tuned at will. We report on an exact diagonalization study electronic properties half-filled narrow moir\'e bands correlation strengths are varied by changing twist angles or interaction strengths. construct phase di...

Two-dimensional sheets of transition metal dichalcogenides are an emerging class of atomically thin semiconductors that are considered to be "air-stable", similar to graphene. Here we report that, contrary to current understanding, chemical vapor deposited transition metal dichalcogenide monolayers exhibit poor long-term stability in air. After room-temperature exposure to the environment for s...

This special issue is about two-dimensional transitionmetal dichalcogenides (2DTMDs), a family of materials consisting of over 40 compounds with the generalized formula of MX2, where M is a transition metal typically from groups 4–7, and X is a chalcogen such as S, Se or Te. Bulk TMDs have been widely studied over several decades because it is possible to formulate compounds with disparate elec...

Chemical functionalization of low-dimensional materials such as nanotubes, nanowires and graphene leads to profound changes in their properties and is essential for solubilizing them in common solvents. Covalent attachment of functional groups is generally achieved at defect sites, which facilitate electron transfer. Here, we describe a simple and general method for covalent functionalization o...

Transition metal dichalcogenides (TMDs) are of interest in numerous applications due to their interesting physical properties. Especially, in thin films they are superior to graphene, due to their ability to be functionalised. Incorporation of that thin film properties in the bulk is challenging. One method is the creation of metastable ferecrystals or stable misfit layer compounds (MLCs), whic...