Well-aligned Cu-doped ZnO nanorods were successfully synthesized on polyethylene terephthalate (PET) substrate using chemical bath deposition method. The structural and optical properties of Cu-doped ZnO nanorods were investigated using X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDX) and photoluminescence (PL) spectroscopy...

The properties of ultraviolet (UV) photodetector fabricated on TiO2/diamond film were investigated. Single crystal diamond layer was grown on high-pressure-high-temperature Ib-type diamond substrate by microwave plasma chemical vapor deposition method, upon which TiO2 film was prepared directly using radio frequency magnetron sputtering technique in Ar and O2 mixing atmosphere. Tungsten was use...

In this paper, a single ZnO microwire-based photodetector for the monitoring of ultraviolet (UV) radiation is described. Single crystal ZnO microwires were synthesized using a chemical vapor deposition (CVD) on the Si or Al2O3 substrate. The UV photodetector was fabricated by using in-situ lift-out method in a focused ion beam system to manipulate individual zinc oxide microwire. The photodetec...

The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN e...

The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regi...

Abstract. This paper demonstrates the first 4H-SiC metal-semiconductor-metal (MSM) UV photodetector. Two types of MSM photodetectors are fabricated for comparison: one in p-type 4HSiC and the other in n-type 4H-SiC. The n-type SiC photodetectors show a low dark current less than 10nA at -15V bias while the p-type ones show a lower dark current of 0.3nA at -25V. Photoresponsivity is measured fro...

The metal-semiconductor-metal ultraviolet (UV) photodetector was fabricated on the Mg(0.47)Zn(0.53)O layer grown by radio-frequency magnetron cosputtering. The photodetector shows the peak response at 290 nm with a cutoff wavelength at 312 nm. It exhibits a very low dark current of about 3 pA at 5 V bias, and the UV-visible rejection ratio (R = 290 nm/R = 400 nm) is more than 4 orders of magnit...

Large-area vertical rutile TiO2 nanorod arrays (TNAs) were grown on F/SnO2 conductive glass using a hydrothermal method at low temperature. A self-powered ultraviolet (UV) photodetector based on TiO2 nanorod/water solid-liquid heterojunction is designed and fabricated. These nanorods offer an enlarged TiO2/water contact area and a direct pathway for electron transport simultaneously. By connect...

Organic photodetectors (OPDs) are potentially useful in many applications because of their light weight, flexibility and good form factors. Despite the high detectivities that have been frequently reported for OPDs recently, the application of these OPDs for weak light detection has been rarely demonstrated. In this thesis, low noise, high gain photodetectors based on organic and ZnO nanopartic...