Wurtzite semiconductor CuInS2 [CIS] has been reported in recent years. As a kind of metastable structure, it is a great challenge to synthesize pure wurtzite CIS at low temperature. In this paper, via a simple and quick solution route, we synthesize both wurtzite- and chalcopyrite-structure CIS. Well-controlled wurtzite CIS hexagonal plates are obtained when an appropriate agent is added. The i...

For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson's ratios of the two GaN polycrystals were calculated using Voig...

Wurtzite and kesterite Cu2ZnSnS4 (CZTS) nanocrystals were employed as counter electrode (CE) materials for dye-sensitized solar cells (DSSCs). Compared to kesterite CZTS, the wurtzite CZTS exhibited higher electrocatalytic activity for catalyzing reduction of iodide electrolyte and better conductivity. Accordingly, the DSSC with wurtzite CZTS CE generated higher power conversion efficiency (6.8...

We present results of a density functional theory study of MnO in the wurtzite structure. Our motivation is provided by recent experiments reporting ferromagnetism in Mn-doped wurtzite-structure ZnO. We find that wurtzite MnO a) is not strongly energetically disfavored compared with the ground state rocksalt MnO, b) shows strong magneto-structural coupling and c) has a piezoelectric response th...

We report a new biphasic crystalline wurtzite/zinc-blende homostructure in gallium nitride nanowires. Cathodoluminescence was used to quantitatively measure the wurtzite and zinc-blende band gaps. High-resolution transmission electron microscopy was used to identify distinct wurtzite and zinc-blende crystalline phases within single nanowires through the use of selected area electron diffraction...

We develop a nucleation-based model to explain the formation of the wurtzite phase during the catalyzed growth of freestanding nanowires of zinc blende semiconductors. We show that in vapor-liquid-solid nanowire growth, nucleation generally occurs preferentially at the triple phase line. This entails major differences between zinc blende and wurtzite nuclei. Depending on the pertinent interface...

2009 WILEY-VCH Verlag Gmb Synthesis of materials with a desired crystal structure is a major challenge in materials engineering. Single-crystal thin films grown by epitaxy typically adopt the same crystal structure as that of their substrates. Here, we report on the observation of a wurtzite InAs thin-film structure on a zinc-blende InAs substrate. Electron-backscatter diffraction (EBSD) and tr...

High-pressure in situ angular dispersive x-ray diffraction study on the wurtzite-type InN nanowires has been carried out by means of the image-plate technique and diamond-anvil cell (DAC) up to about 31.8 GPa. The pressure-induced structural transition from the wurtzite to a rocksalt-type phase occurs at about 14.6 GPa, which is slightly higher than the transition pressure of InN bulk materials...

Ternary zincblende-derived I-III-VI2 chalcogenide and II-IV-V2 pnictide semiconductors have been widely studied and some have been put to practical use. In contrast to the extensive research on these semiconductors, previous studies into ternary I-III-O2 oxide semiconductors with a wurtzite-derived β-NaFeO2 structure are limited. Wurtzite-derived β-LiGaO2 and β-AgGaO2 form alloys with ZnO and t...

This paper describes the equilibrium morphologies of zinc sulfide nanoparticles in the wurtzite phase as a function of size, determined using ab initio Density Functional Theory (DFT) simulations and a shape-dependent thermodynamic model predicting the Gibbs free energy of a nanoparticle. We investigate the relative stabilities of a variety of nanoparticle shapes based on the wurtzite structure...