On the basis of Maxwell's equations and a plane wave expansion method, photonic band structure is computed for 3D chalcogenide photonic crystal with diamond lattice. The geometrical influence on the photonic bandgap is studied for three dimensional chalcogenide photonic crystal of diamond lattice for both chalcogenide spheres in air and air spheres in chalcogenide background. The air spheres in...

The concept of 'bandgap mapping' was proposed originally to map the inhomogeneity of band energy in III-V semiconductors with a spatial resolution of a few nanometres in a scanning transmission electron microscope with the focus beam mode. In this paper, several techniques were developed to demonstrate the possibility to map the distribution of bandgap energies for GaN/AlN quantum-well structur...

© 2013 Myunghoi Kim et al. 827 In this paper, we present wideband common-mode (CM) noise suppression using a vertical stepped impedance electromagnetic bandgap (VSI-EBG) structure for high-speed differential signals in multilayer printed circuit boards. This technique is an original design that enables us to apply the VSI-EBG structure to differential signals without sacrificing the differentia...

A high precision temperature compensated CMOS bandgap reference is presented. The proposed circuit employs current-mode architecture that improves the temperature stability of the output reference voltage as well as the power supply rejection when compared to the conventional voltage-mode bandgap referenc. Using only first order compensation the new architecture can generate an output reference...

The extended application of graphene-based electronic devices requires a bandgap opening in order to realize the targeted device functionality. Since the bandgap tuning of pristine graphene is limited to 360 meV, the chemical modification of graphene is considered essential to achieve a large bandgap opening at the expense of electrical properties degradation. Reduced graphene oxide (RGO) has a...

A design of a CMOS bandgap reference (BGR), for portable applications with medium accuracy, is described and the measurement results of the fabricated chips are presented. The output voltage of the reference is set by resistive subdivision. In order to achieve small area and low power consumption, n-well resistors are used. This design features a reference voltage of 0.750 V with 1σ variation o...

A low-voltage bandgap reference (BGR) circuit is designed and fabricated in a 90 nm CMOS technology. To mitigate error resulting from the mismatch in temperature dependency of the current in the output current mirror device and that of the BGR core, an output-regulated current mirror is incorporated. Experimental results show that the output voltage is 497.2 mV at 258C with a temperature coeffi...

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