Layered semiconductors based on transition-metal chalcogenides usually cross from indirect bandgap in the bulk limit over to direct bandgap in the quantum (2D) limit. Such a crossover can be achieved by peeling off a multilayer sample to a single layer. For exploration of physical behavior and device applications, it is much desired to reversibly modulate such crossover in a multilayer sample. ...

We introduce a solution based on the source-model technique for periodic structures for the problem of electromagnetic scattering by a two-dimensional photonic bandgap crystal slab illuminated by a transverse-magnetic plane wave. The proposed technique takes advantage of the periodicity of the slab by solving the problem within the unit cell of the periodic structure. The results imply the exis...

Recently rediscovered black phosphorus is a layered semiconductor with promising electronic and photonic properties. Dynamic control of its bandgap can allow for the exploration of new physical phenomena. However, theoretical investigations and photoemission spectroscopy experiments indicate that in its few-layer form, an exceedingly large electric field in the order of several volts per nanome...

The current paper presents an improved bandgap voltage reference (BGR) that utilizes curvature-corrected current generators which compensate for the voltage reference at lower and higher temperature range. The voltage reference is operated with a supply voltage of 2.5V to achieve an output reference of 1.1835V. The temperature coefficient achieved from the circuit is 1.342 ppm/◦C, resulting fro...

In the current paper, an improvement of piecewise curvature-corrected CMOS bandgap reference (BGR) circuit is proposed. The circuit utilizes piecewise nonlinear curvature-corrected current (PNCCC) in a conventional BGR with a current control circuit, which compensates for the voltage reference at a higher temperature range. The current control circuit (CCC) is used to reduce the total current a...

Thermal tuning of silicon-based one-dimensional photonic bandgap microcavities is demonstrated. Thermally induced spectral shifts are caused by both the host silicon matrix and the optically active material infiltrated inside the photonic bandgap structures. The active material leads to the dominant thermal tuning contribution but the effect of the silicon matrix cannot be neglected. The intera...

We use a simple picture based on the π electron approximation to study the bandgap variation of carbon nanotubes with uniaxial and torsional strain. We find (i) that the magnitude of slope of bandgap versus strain has an almost universal behaviour that depends on the chiral angle, (ii) that the sign of slope depends on the value of (n−m) mod 3 and (iii) a novel change in sign of the slope of ba...

We use a simple picture based on the π electron approximation to study the bandgap variation of carbon nanotubes with tensile and torsional strain. We find (i) that the magnitude of slope of bandgap versus strain has an almost universal behaviour that depends on the chiral angle, (ii) that the sign of slope depends on the value of (n−m) mod 3 and (iii) a novel change in sign of the slope of ban...

An ytterbium-doped photonic bandgap fiber amplifier operating at the long wavelength edge of the ytterbium gain band is investigated for high power amplification. The spectral filtering effect of the photonic bandgap efficiently suppresses amplified spontaneous emission at the conventional ytterbium gain wavelengths and thus enables high power amplification at 1178 nm. A record output power of ...

Superiorly high photoconductivity is desirable in optoelectronic materials and devices for information transmission and processing. Achieving high photoconductivity via bandgap engineering in a bandgap-graded semiconductor nanowire has been proposed as a potential strategy. In this work, we report the ultrahigh photoconductivity of bandgap-graded CdSxSe1-x nanowires and its detailed analysis by...