Large surface infrared photonic crystals with reflectance higher than 90% have successfully been synthesized by self-assembling large size SiO2 spheres, of 0.8 – 4.5 m diameters, followed by melt infiltration with the chalcogenide glass Ge33As12Se55 and the removal of the SiO2 spheres by chemical etching. The sphere size and the periodicity of the templates were chosen to guarantee the formatio...

Low-loss waveguides constitute an important building block for integrated photonic systems. In this work, we investigated low-loss photonic device fabrication in Ge23Sb7S70 chalcogenide glass using electron beam lithography followed by plasma dry etching. High-index-contrast waveguides with a low propagation loss of 0.5 dB/cm and microdisk resonators with an int...

We report the first (to our knowledge) experimental observation of resonant cavity-enhanced photosensitivity in As(2)S(3) chalcogenide glass film at 1550 nm telecommunication wavelength. The measured photosensitivity threshold is <0.1 GW/cm(2), and a photoinduced refractive index increase as large as 0.016 is observed. The photosensitive process is athermal; further, we confirm the absence of t...

A first step towards a microfabricated potentiometric thin-film sensor array for the simultaneous detection of Pb, Cd and Cu has been realized. The sensitive layers used are on the basis of chalcogenide glass materials. These thin-film chalcogenide glass materials that consist of mixtures of Pb-Ag-As-I-S, Cd-Ag-As-I-S or Cu-Ag-As-Se have been prepared by pulsed laser deposition technique. The d...

Chalcogenide glass fibers are promising photonic tools to develop Fiber Evanescent Wave Spectroscopy (FEWS) optical sensors working in the mid-infrared region. Numerous pioneering works have already been carried out showing their efficiency, especially for bio-medical applications. Nevertheless, this technology remains confined to academic studies at the laboratory scale because chalcogenide gl...

We investigate the nature of thin films formed by the photodissolution of Ag into Se-rich Ge–Se glasses for use in programmable metallization cell devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. The way in which Ag incorporates into the chalcogenide film during photodiffusion is examined using Rutherford backscattering ...

The reversible and transient photostimulated structural changes in annealed chalcogenide glass (ChG) layers were used to form interference periodic structures on semiconductor surfaces and metal films. It was shown that negative-action etchants based on amines dissolve illuminated parts of a chalcogenide film, i.e., act as positive etchants. The diffraction gratings and 2-D interference structu...

We demonstrate low loss photonic crystal waveguides in chalcogenide (Ge(33)As(12)Se(55)) glasses. The measured losses are as low as 21 dB/cm. We experimentally determine the refractive index of the thin film chalcogenide glass to be n = 2.6 and demonstrate that dispersion engineering can be performed up to a group index of ng = 40 in this relatively low refractive index contrast system.

Chalcogenide glasses from (GeSe2)100-x(Sb2Se3)x system were synthesized, with x varying from 5 to 70, in order to evaluate the influence of antimony selenide addition on nonlinear optical properties and photosensitivity. Nonlinear refractive index and two photon absorption coefficients were measured both at 1064 nm in picosecond regime using the Z-scan technique and at 1.55 μm in femtosecond re...