Co-design of digital signal-processing (DSP) algorithms and power-amplifier characteristics can lead to improved efficiency and linearity through a variety of strategies including: predistortion, DSP control over bias conditions, particularly the power supply voltage, and DSP generation of digital input signals for switching amplifiers. This paper discusses several amplifier architectures that ...

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In this paper, the reason for the relatively high distortion level of conventional class-D audio amplifiers is discussed. It is pointed out that the classical approach is insufficient for high performance applications. Therefore the importance of the matching between modulation and demodulation is demonstrated by simulation. 1. THE CLASS-D-AUDIO AMPLIFIER The concept of class-D amplifiers was i...

This paper presents a proposed design for transcutaneous inductive powering links with “suspended-carrier”. The design used to transfer power and data to the implanted devices.This work describes the implementation of a 0.35μm CMOS integrated circuit using 3.3v supply dedicated to cochlear prosthesis. In the wireless biomedical implants the carrier frequency, which represent the resonant freque...

The paper presents a combined power amplifier system consisting of a linear amplifier unit with a switched-mode (class D) current dumping stage arranged in parallel. With this topology the fundamental drawback of conventional linear power amplifiers the high loss is avoided. Compared to a pure class D (switching) amplifier the presented system needs no output filter to reduce the switching freq...

High-power high-voltage dc power supply has been developed based on series resonant converter technology for a MW class RF amplifier. For low-voltage ripple, an IGBT inverter consisting of 1400 V-600 A devices is drives with a maximum switching frequency of 31.2 kHz. A performance test was carried out using an RF amplifier. We examined this power supply under two different conditions. One was w...

In this paper, a design and fabrication of a miniaturized 2.5 GHz 8 W power amplifier using selectively anodized aluminum oxide(SAAO) substrate are presented. The process of SAAO substrate is recently proposed and patented by Wavenics Inc. which uses aluminum as wafer. The selected active device is a commercially available GaN HEMT chip of TriQuint company, which is recently released. The optim...

A micropower-relevant model is extracted from the DC characteristics of an n-type buried channel Si/SiGe HMODFET (Hetero-junction Modulation Doped FET). This model is then used to design a novel monolithic SiGe single-stage class-A power amplifier for micropower operation (sub 500μW). The amplifier is fabricated and measured data of the power-gain versus operating power are presented here for t...

This paper presents a combined power amplifier system consisting of a linear amplifier unit with a switchedmode (class D) current dumping stage arranged in parallel. With this topology, the fundamental drawback of conventional linear power amplifiers—the high loss—is avoided. Compared to a pure class D (switching) amplifier, the presented system needs no output filter to reduce the switching fr...

A class-F high efficiency GaN power amplifier (PA) for dual band operation at 2.14 GHz and 2.35 GHz is proposed. A novel dual band harmonic-rejection load network, which controls the terminating impedances of the second and third harmonics, and contributes greatly to efficiency improvement of PA, is described. In addition, a matching network which guarantees the high efficiency and gain of PA f...