A new CMOS-based image sensor that is intrinsically compatible with onchip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 pm p-well CMOS process, and consists of a 128 x 128 array of 40 pm x 40 pm pixels. The CMOS image sensor technology ena...

In view of changing the type of energy conversion in CMOS circuits, this paper investigates low power CMOS circuit design which adopts gradually changing power clock. First, we discuss the algebraic expressions and the corresponding properties of clocked power signals, then a clocked CMOS gate structure is presented. The PSPICE simulations demonstrate the low power characteristic of clocked CMO...

Abstract: In this paper, CMOS digitally controlled oscillator (DCO) design is analyzed for 4-16 bits. The CMOS DCO is designed based on a ring oscillator. Simulations of the analyzed DCO using 250nm CMOS technology achieve controllable different frequency range with a wide linearity. A 4-bit digitally controlled CMOS oscillator (DCO) design is best by adjusting the width of p-MOS and n-MOS devi...

In this paper we ultra low-voltage and high speed CMOS domino logic. For supply voltages below 500mV the delay for a ultra low-voltage NAND2 gate is aproximately 10% of a complementary CMOS inverter. Furthermore, the delay variations due to mismatch is much less than for conventional CMOS. Differential domino gates for AND/NAND and OR/NOR operation are presented. Keywords—Low-Voltage, High-Spee...

After analyzing the limitations of the traditional description of CMOS circuits at the gate level, this paper introduces the notions of switching and signal variables for describing the switching states of MOS transistors and signals in CMOS circuits, respectively. Two connection operations for describing the interaction between MOS transistors and signals and a new description for CMOS circuit...

This paper describes the parameter and characteristic analysis of Low power and High speed CMOS Logic Circuits in 90nm Technology. The proposed CMOS logic circuits consists only logic gates. CMOS circuit is fabricated in 0.12μm and 90nm CMOS technology. The supply voltage is 1.20V. The temperature was 27oC. We observed Inverter (NOT gate) properties MOS, Capacitance, Resistance, Inductance and ...

We investigate defects in CMOS domino gates and derive the test conditions for them. Very-Low-Voltage Testing can improve the defect coverage, which we define as the maximum detectable resistance, of intra-gate and inter-gate resistive shorts. We also propose a new keeper design for CMOS domino circuits. The new keeper design has low performance impact and is best useful for small CMOS domino g...

This paper concerns the design, implementation and subsequent experimental validation of a low-voltage analog CMOS switch based on a gate-bootstrapped method. The main part of the proposed circuit is a new low-voltage and low-stress CMOS clock voltage doubler. Through the use of a dummy switch, the charge injection induced by the bootstrapped switch is greatly reduced resulting in improved samp...

The direct deposition of carbon nanotubes on CMOS microhotplates is demonstrated in this paper. Tungsten microhotplates, fabricated on thin SOI membranes aside CMOS control circuitry, are used to locally grow carbon nanotubes by chemical vapour deposition. Unlike bulk heating of the entire chip, which could cause degradation to CMOS devices and interconnects due to high growth temperatures in e...

Coronary artery disease and its related complications pose great threats to human health. In this work, we aim to clinically evaluate a CMOS field-effect biomolecular sensor for cardiac biomarkers, cardiac-specific troponin-I (cTnI), N-terminal prohormone brain natriuretic peptide (NT-proBNP), and interleukin-6 (IL-6). The CMOS biosensor is implemented via a standard commercialized 0.35 μm CMOS...