A free surface problem arising in the Czochralski (CZ) crystal growth process is considered. A mathematical model accounting for the interaction of the molten material with applied and induced magnetic fields, temperature-induced convection, rotating boundaries and a free surface is given. The model described avoids some common simplifying assumptions and allows for more general geometries, and...

In this paper we describe a semianalytical approach to computing the temperature and thermal stress inside a III-V compound grown with the Czochralski technique. An analysis of the growing conditions indicates that the crystal growth occurs on the conductive time scale. A perturbation method for the temperature field is developed for an arbitrary crystal profile using the Biot number as a (smal...

The crystal structure of the title compound, α-PbTeO(3) (PTO), has been reported previously by Mariolacos [Anz. Oesterr. Akad. Wiss. Math. Naturwiss. Kl. (1969), 106, 128-130], refined on powder data. The current determination at room temperature from data obtained from single crystals grown by the Czochralski method shows a significant improvement in the precision of the geometric parameters w...

Abstract. This paper deals with axisymmmetry breaking instabilities in Czochralski process of crystal growth. Numerical linear stability analysis was carried out using the axisymmetric bulk flow model. Stability diagrams of critical Grashof numbers Grc and frequencies ωc dependent on aspect ratio α(=height/radius), 0.4 ≤ α ≤ 1.0 and Prandtl number Pr = 0.01 are shown. Computations were carried ...

Barium strontium sodium niobate (Sr0.7Ba0.3)2NaNb5O15 (SBNN70) crystals were grown by the Czochralski method. X-ray energy dispersive spectrometry showed that SBNN70 crystals have a stoichiometric composition nearly identical to the starting materials. X-ray diffraction of crushed powder indicated that the SBNN70 crystals are orthorhombic with a = 1.2748 nm, b = 1.1402 nm and c = 0.3898 nm. The...

As a crystal grows, the temperature distribution of and melt will change. It is necessary to study dynamic process single-crystal growth. Due relatively low crystallization rates used in industrial Czochralski growth system, steady state compute flow. A two-dimensional axisymmetric model whole furnace was established. The large-size bulk β-Ga2O3 single using method has been numerically analyzed...

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Czochralski silicon D. Macdonald, F. Rougieux, A. Cuevas, B. Lim, J. Schmidt, M. Di Sabatino, and L. J. Geerligs Department of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra ACT 0200, Australia Institut für Solarenergieforschung Hameln (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany SINTEF Materials and Chemistry, A. Getz v. 2B, 7465 Tron...