Floating particles often appear during the Czochralski (CZ) growth of β-Ga2O3 in Ir crucible, thereby impeding seeding process. Identifying floating nanoparticles and then inhibiting or removing them is critical for growing high-quality single crystals. We grew crystals containing using CZ method. It indicated that were composed with a face-centered cubic (fcc) structure. In addition, β-Ga2O3/I...

UFe6Ga6 polycrystalline samples were prepared by arc-melting, and single crystals were grown by the Czochralski method. This compound crystallizes in the orthorhombic ScFe6Ga6-type structure (space group Immm, aZ5.0560(4), bZ8.5484(7) and cZ8.6914(7) Å), an ordered variant of the ThMn12-type structure. A ferromagnetic-type transition at TCZ530(5) K is seen in the magnetization and A.C.-suscepti...

The distribution in liquid-encapsulated-Czochralski (LEC) GaAs:Te wafers of point and complex defects has been investigated together with their influence on the minority-carrier diffusion length L. Three wafers with different Te-doping concentration (2.2X 1017, 4.5X 1017, and 1.5X 1018 cme3) have been studied by means of the electron-beam-induced-current (EBIC) mode of scanning electron microsc...

In this paper, we present a model for grown-in point defects inside indium antimonide crystals grown by the Czochralski technique. Our model is similar to the ones used for silicon crystal, which includes the Fickian diffusion and a recombination mechanism. This type of models is used for the first time to analyze grown-in point defects in indium antimonide crystals. The temperature solution an...

Abstract. Magnetic properties of Lu2Co17-xSix single crystals grown by the Czochralski method were investigated. The homogeneity range of Si substitution for Co extends up to x = 3.4. The unit cell volume, V, Curie temperature, TC, and spontaneous magnetic moment, Ms, decrease monotonously with increasing Si content. Upon Si substitution, the spin-reorientation transition occurring in Lu2Co17 a...

Abstract. In this paper we present a semi-analytical thermal stress solution for directional growth of type III-V compounds with small lateral heat flux and weak anisotropy. Both geometric and material anisotropy are considered and our solution can be applied to crystals grown by various growth techniques such as the Czochralski method. The semi-analytical nature of the solution allows us to co...

This paper describes modeling and simulation for the growth and dissolution of oxygen precipitates in Czochralski silicon(CZ) wafers during heat treatment. Growth and dissolution rates arc newly derived and inserted into a set of chemical rate equations(CILEs) and a Fokkor-Planck equation(FPE). Annealing ambients and surface conditions are taken into account for solving continuity equations in ...

“Mixed” calcium rare-earth aluminate laser host crystals Ca(Gd,Lu)AlO4 (CALGLO) with up to 10.8 at.% Lu codoped Tm3+ and Ho3+ ions are grown by the Czochralski method along [001] direction. The segregation of is studied. crystal structure refined Rietveld method. Tm,Ho:Ca(Gd,Lu)AlO4 crystallizes in tetragonal system (sp. gr. I4/mmm) exhibiting a K2NiF4 type structure. lattice constants = 3.6585...

A study was performed on the growth interface of a large-diameter 1 at% neodymium-doped yttrium aluminum garnet (Nd:YAG) single crystal grown using Czochralski method. Red parallel light and an orthogonal polarizing system were used to observe distribution central lateral cores at different interfaces. The solid–liquid Nd:YAG mainly determined via interaction between natural forced convection. ...