Lithium molybdate single crystals up to one kilogram have been grown by a conventional Czochralski process. The growth configuration (geometry, coil, crucible, insulation casing) was optimized numerical simulation of heat and mass transfer. Dislocations are shown belong the basal glide system. Their density (≤104 cm−2) luminescence properties indicate crystal quality similar that previously rep...

Effect of the capillary meniscus on the instability of large Prandtl number Czochralski melt flow is studied experimentally. The measurements are conducted in two experimental facilities by two independent non-intrusive optical techniques. The quantitative results are presented as dependencies of the critical Grashof number (critical temperature difference) on the meniscus height for different ...

The microsegregation behaviour of antimony in the faceted and non-faceted Czochralski silicon crystal growth was analyzed quantitatively. Using small melt heights and no rotation, dopant striations of various small spacings were eliminated. Interface demarcation and spreading resistance measurements were used for the segregation analysis. The dopant concentration and its fluctuation during the ...

We have studied the effect of thermal history on iron precipitation behavior in intentionally contaminated Czochralski silicon wafers that contain well-defined precipitation sites for iron, oxide precipitates. Iron precipitation was studied at a temperature range between 600 C and 700 C for various times. The results indicate that iron precipitation is strongly affected by the thermal history o...

The temperature dependent band edge energy of the novel tungsten bronze type calcium barium niobate (CBN) is measured over a temperature range from 80 K to 573 K. CBN has been under investigation for serveral years and is believed to be a promising material for future applications. Czochralski-grown, colorless single crystals from the congruently melting composition with a calcium content of 0....

The luminosity upgrade of the large hadron collider (SLHC) at CERN will require the innermost layers of the vertex detectors to achieve excellent performances up to fluences of about 10 hadrons cm . New solid state detectors are currently being developed by the CERN RD50 collaboration. In this paper recent results on magnetic Czochralski, epitaxial, and oxygen-enriched silicon will be presented...

A new method of diode laser treatment passivating contacts for solar cells application based on electron beam evaporated highly doped amorphous silicon (a-Si) layers deposited solar-grade Czochralski wafers with SiOx tunneling is investigated. In a first step, an interface oxide grown and n-type a-Si layer both sides by evaporation. next the applied. Two different scanning speeds 15 20 mm s−1 a...

Abstract The growth of large-diameter high-resistivity β -Ga 2 O 3 (010) substrates is important for the low-cost production lateral Ga devices. We grew a inch diameter Fe-doped single crystal by using vertical Bridgman (VB) method, which expected to grow crystals with various orientations. Two-inch were prepared from obtained crystals, and their crystallinity, concentration Fe dopants, electri...