Two inch diameter, highly conducting (Si-doped) bulk β-Ga 2 O 3 single crystals with the cylinder length up to one were grown by Czochralski method. The obtained revealed high structural quality characterized narrow x-ray rocking curves (FWHM ≤ 25 arc sec) and surface smoothness (RMS < 200 pm) of epi-ready wafers. free electron concentration Hall mobility at room temperature in range 1.6–9 ×...

The boron-oxygen recombination center responsible for the light-induced degradation of Czochralski silicon solar cells can be permanently deactivated by illumination at elevated temperature. In this study, we examine the impact of dopant compensation on the deactivation process. The experimental results show that the deactivation rate depends inversely on the total boron concentration instead o...

Carbon nanotubes (CNTs) have been under intense investigations during the past two decades due to their unique physical and chemical properties; however, there is still no commonly accepted growth mechanism to describe the growth behavior of CNTs. Here, we propose a nano Czochralski (CZ) model which regards the catalytic growth of a CNT as a CZ process taking place on the nano scale. The main i...

We present a fast method to create interstitial oxygen concentration maps from resistivity calibrated photoluminescence images prior to and after a heat treatment at 450 1C. The method utilizes the influence of thermal donors on the effective doping concentration of a sample. Although the determination of thermal donor concentrations from conductivity measurements is customary in literature, we...