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We report on the lattice location of Er in Si using the emission channeling technique. The angular distribution of conversion electrons emitted by the decay chain 167Tm st1y2 ­ 9.25 dd ! 167mEr s2.27 sd was monitored with a position-sensitive detector following room temperature implantation and annealing up to 950 ±C. Our experiments give direct evidence that Er is stable on tetrahedral interst...

Effects of iron and copper impurities on the amount of precipitated oxygen and the oxide precipitate and stacking fault densities in Czochralski-grown silicon have been studied under varying thermal anneals. Silicon wafers were intentionally contaminated with iron or copper and subsequently subjected to different two-step heat treatments to induce oxygen precipitation. The iron contamination le...

Solar cells made on boron-doped Czochralski (Cz) silicon show a degradation in performance when exposed to light until a stable efficiency is reached. This effect is due to the creation of metastable defects in the Cz silicon base which strongly reduce the bulk carrier lifetime. In a recent model, proposed by one of the authors, the metastable defect was tentatively identified with a boron-oxyg...

A mathematical model that explores the basic transport phenomena in a Czochralski process, their interaction and influence on the growth of high quality oxide crystals is presented. Rare earth garnets YAG and Nd-doped YAG are considered as representative oxide materials for the purpose of modeling and numerical simulation. The model proposed is evolutionary in time, and axisymmetric in space. A...

In this paper an optimal control approach for thermal stress reduction inside a Czochralski grown single crystal is presented. Using the lateral heat flux as a control variable, an optimal control formulation for minimizing thermal stress with a given crystal shape is derived. Since thermal stress is also affected by the lateral shape of crystals during growth, the level of the stress can be re...

We have irradiated Czochralski silicon (Cz-Si) and Float Zone silicon (Fz-Si) detectors with 24GeV=c and 10MeV protons. Samples were characterized with Capacitance-Voltage measurements (CV), Transient Current Technique (TCT) and secondary electron backscattering recorded by Scanning Electron Microscope (SEM). We present the evolution of the effective doping concentration as a function of irradi...