Our numerical modelling of the Czochralski growth of single crystalline β-Ga2O3 crystals (monoclinic symmetry) starts at the 2D heat transport analysis within the crystal growth furnace, proceeds with the 3D heat transport and fluid flow analysis in the crystal-melt-crucible arrangement and targets the 3D thermal stress analysis within the β-Ga2O3 crystal. In order to perform the stress analysi...

Critical stresses necessary to generate dislocation glide loops in Czochralski silicon containing oxide precipitates have been investigated. Using three-point bending and etching techniques, it was possible to determine the minimum shear stress required to generate dislocation glide loops from controlled distribution of precipitates under constant-stress conditions. The generation of glide disl...

Modeling turbulent convection in the melt is the most di cult part of the simulation of the transport processes in the growth of large-diameter silicon crystals by the Czochralski (CZ) process. We report the application of hybrid nite-element/ nitevolume methods for the integrated modeling of turbulence in the melt and heat transfer by conduction, convection and radiation throughout the CZ syst...