We have processed pin-diodes and strip detectors on nand p-type high-resistivity silicon wafers grown by magnetic Czochralski method. The Czochralski silicon (Cz-Si) wafers manufactured by Okmetic Oyj have nominal resistivity of 900O cm and 1.9 kO cm for nand p-type, respectively. The oxygen concentration in these substrates is slightly less than typically in wafers used for integrated circuit ...

The DLTS (Deep Level Transient Spectroscopy) and PL (Photoluminescence) spectra of dislocations introduced in Cz-Si (single crystal grown by the Czochralski method) under clean conditions have been studied. The oxygen effect on the formation of both spectra has been revealed. For the first time, a concomitant decay of both PL and DLTS signals with deformation duration in the range of 0.25 to 14...

The work is devoted to the creation of a virtual instrument in LabVIEW environment, which makes it possible simulate process growing crystal depending on technological parameters. As under consideration, we chose method single crystals by pulling them up from spare surface large volume melt with initiation onset crystallization introducing seed (or several crystals) given structure and crystall...

We have made a quantitative study about the thermal activation of thermal donors in high resistivity magnetic Czochralski silicon. The thermal donor activation has been performed through a thermal treatment at 430 1C up to a total time of 80min. The space charge density after each annealing step has been extracted from capacitance–voltage measurements. If the starting material is boron-doped p-...

A computational approach to the study of three-dimensional instabilities of flows in a Czochralski crucible is proposed. The flow is driven by buoyancy, thermocapillarity and rotation of the crystal and the crucible. The thermal boundary conditions account for the prescribed temperatures or heat flux, as well as convective and radiative heating or cooling of the boundaries. The numerical approa...

High quality GGG:Cr,Ca crystal for passive Q-switching Nd:garnet lasers has been grown by the Czochralski method. Thermal treatment of GGG crystals co-doped with Cr4+ and Ca2+ at different temperatures is investigated. The absorption spectra were resolved into different peaks, of modified Gaussian line-shape. Transition from octahedral sites to tetrahedral ones is thermally activated. An...