The lack of p-type lithium niobate limits it serving as an active material. A series of Mo-doped and pure congruent lithium niobate crystals were grown by Czochralski method under different polarization conditions. Their dominant carrier species were characterized by holographic experiment. The results showed dominant charge carrier species may be changed from electrons to holes when lithium ni...

The detailed comparative analysis of luminescent and scintillation properties of the single crystalline films (SCF) of YAG:Ce garnet grown from melt-solutions based on the traditional PbO-based and novel BaO-based fluxes, and of a YAG:Ce bulk single crystal grown from the melt by the Czochralski method, was performed in this work. Using the Am (a-particle, 5.49 MeV) excitation we show that scin...

Preliminary results obtained by a code aimed to the analysis of three-dimensional (3D) instability of axisymmetric melt flows in Czochralski crucible are described. The CPU time and the computer memory necessary for the comprehensive 3D stability analysis by a second-order finite volume method are estimated. Basing on a certain experimental configuration, we give an example of the stability dia...

Abstract. In this paper we present a model for computing thermal stress inside a crystal with facets. Using a systematical perturbation analysis, a semi-analytical thermal stress solution is obtained for constrained directional growth with small lateral heat flux. Our solution can be applied to crystals grown by various growth techniques such as the Czochralski method. The semianalytical nature...

We show that deep level doping of Czochralski-grown silicon wafers is capable of providing high resistivity handle wafers suitable for radio frequency integrated circuits. Starting from n-type Czochralski silicon wafers having a nominal resistivity of 50 cm, we use ion implantation and subsequent annealing to increase the resistivity of the wafers to over 10 k cm at room temperature. Coplanar w...

To obtain bulk? large-sized orthoferrite single crystals with different rare-earth elements a new crystal growth technology is proposed including modified Czochralski method and using no metal crucibles for melt suspension. For this purpose two unusual Czochralski method modifications are used. In the first one the melt of crystall~zed material 1s obtained at heating the upper surface of pol~cq...