Single crystals of intermediate valent EuPd$_2$Si$_2$ were grown from an Eu-rich melt by the Bridgman as well Czochralski technique. The chemical and structural characterization extracted single crystalline Czochralski-grown specimen yielded a slight variation Si-Pd ratio along growth direction confirms existence finite Eu(Pd$_{1-m}$Si$_m$)$_2$ homogeneity range. thorough physical carried out o...

Four single crystals (Yb0.15Lu0.85xY0.85-0.85x)3Al5O12 (x = 0, 0.25, 0.5, 1) were grown by the Czochralski method. The correlation of host atom Lu:Y ratios with density and luminescence properties revealed. increases linearly increasing Lu3+ content, which will improve gamma ray cut-off ability. integrated intensity X-ray excited spectrum exponentially Y:Lu ratio, while decay time becomes even ...

The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26 MeV protons. After a 1MeV neutron equivalent fluence of 1x10 cm the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measure...

We report laser-induced cooling with thulium-doped BaY2F8 single crystals grown using the Czochralski technique. The spectroscopic characterization of the crystals has been used to evaluate the laser cooling performance of the samples. Cooling by 3 degrees below ambient temperature is obtained in a single-pass geometry with 4.4 Watts of pump laser power at lambda = 1855 nm.