In modern computer systems, various memory components are used, such as on-chip register files, on-chip/off-chip cache memories, and off-chip main memories. High-speed memory system design has been and will have been one of the most important issues. In microprocessors, for example, the on-chip cache sizes are growing with each generation to bridge the increasing divergence in the speeds of the...

We have developed a new self-aligned gate technology for InGaAs High Electron Mobility Transistors with non-alloyed Mo-based ohmic contacts and a very low parasitic capacitance gate design. The new process delivers a contact resistance of 7 Ohm-μm and a source resistance of 147 Ohm-μm. The nonalloyed Mo-based ohmic contacts show excellent thermal stability up to 600 °C. Using this technology, w...

Sub-30 nm III-V planar Quantum-Well (QW) n-type MOSFETs are fabricated through a self-aligned CMOS compatible front-end process. Good performance and short-channel effect mitigation are obtained through the use of a QW-channel that incorporates a thin pure InAs subchannel and extremely scaled HfO2 gate dielectric on a very thin InP barrier (total barrier EOT<1 nm). The devices also feature self...