نتایج جستجو برای: dimensional hole gas

تعداد نتایج: 685696  

Journal: :The Journal of chemical physics 2014
Pierre-François Loos Caleb J Ball Peter M W Gill

We introduce a generalization (gLDA) of the traditional Local Density Approximation (LDA) within density functional theory. The gLDA uses both the one-electron Seitz radius rs and a two-electron hole curvature parameter η at each point in space. The gLDA reduces to the LDA when applied to the infinite homogeneous electron gas but, unlike the LDA, it is also exact for finite uniform electron gas...

2017
Xiaoyang Zhang Xiaodong Wang Xiaochun Hou Wenli Xu

Based on the porous flow theory, an extension of the pseudo-functions approach for the solution of non-linear partial differential equations considering adsorption-desorption effects was used to investigate the transient flow behavior of fractured wells in shale gas reservoirs. The pseudo-time factor was employed to effectively linearize the partial differential equations of the unsteady flow r...

For a Czochralski growth of Ge crystal, thermal fields have been analysed numerically using the three-dimensional finite volume method (FLUENT package). The arrangement used in a real Czochralski crystal growth lab included a graphite crucible, heat shield, heating device, thermal insulation and chamber including two gas outlets. We have considered two cases for calculations, which are configur...

1999
V. Venkataraman P. V. Schwartz J. C. Sturm

Single and symmetric double p-type modulation-doped structures have been fabricated in Si/ SiGe for the first time by rapid-thermal chemical-vapor deposition. Temperaturedependent electrical-measurements and high-field magnetotransport measurements demonstrate the presence of a well-confined two-dimensional hole gas in these samples. Nominallysymmetric normal and inverted structures differ in c...

1998
G. Eytan Y. Yayon M. Rappaport H. Shtrikman I. Bar - Joseph

The near-field photoluminescence of a gated two-dimensional electron gas is measured. We use the negatively charged exciton, formed by binding of an electron to a photo-excited electron-hole pair, as an indicator for the local presence of charge. Large spatial fluctuations in the luminescence intensity of the negatively charged exciton are observed. These fluctuations are shown to be due to ele...

1998
G. Eytan Y. Yayon M. Rappaport H. Shtrikman I. Bar - Joseph

The near-field photoluminescence of a gated two-dimensional electron gas is measured. We use the negatively charged exciton, formed by binding of an electron to a photo-excited electron-hole pair, as an indicator for the local presence of charge. Large spatial fluctuations in the luminescence intensity of the negatively charged exciton are observed. These fluctuations are shown to be due to ele...

2016
Paul Wenk Michael Kammermeier John Schliemann

We derive an effective Hamiltonian for a (001)-confined quasi-two-dimensional hole gas in a strained zincblende semiconductor heterostructure including both Rashba and Dresselhaus spin-orbit coupling. In the presence of uniaxial strain along the 〈110〉 axes, we find a conserved spin quantity in the vicinity of the Fermi contours in the lowest valence subband. In contrast to previous works, this ...

1998
S. P. de Alwis

The assumptions behind the recently conjectured relation between gauge theory and supergravity are elaborated on. It is pointed out that the scaling limit that preserves supergravity solutions, gives the entire DBI action on the gauge theory side, but in the low energy limit the relation between the conformal field theory and Anti-de Sitter supergravity emerges. We also argue that recent work o...

1997
J. M. Kikkawa I. P. Smorchkova N. Samarth D. D. Awschalom

Time-resolved Kerr reflectivity of two-dimensional electron gases in II-VI semiconductors provides a direct measure of electron spin precession and relaxation over a temperature range from 4 to 300 kelvin. The introduction of n-type dopants increases the electronic spin lifetimes several orders of magnitude relative to insulating counterparts, a trend that is also observed in doped bulk semicon...

2012
K. W. Park V. D. Dasika H. P. Nair A. M. Crook E. T. Yu

Related Articles A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN J. Appl. Phys. 111, 113105 (2012) Highly stable charge generation layers using caesium phosphate as n-dopants and inserting interlayers J. Appl. Phys. 111, 103107 (2012) Enhancing hole mobility in III-V semiconductors J. Appl. Phys. 111, 103706 (2012) Role of surface trap states on two-dimensional e...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید