the effects of conduction band nonparabolicity, aluminum concentration and external electric field on the charge density and binding energy of an on-center hydrogenic donor impurity in a spherical quantum dot which is located at the center of a cylindrical nano-wire are studied. the energy eigenvalues and the corresponding wave functions are calculated using finite difference approximation with...

In wide bandgap GaN a large number of interesting and important scientific questions remain to be answered. For example, the large free electron concentration reaching 1019 to 1020 cm-3 in nominally undoped material are ascribed to intrinsic defects because no chemical impurity has been found at such high concentrations. According to theoretical models a nitrogen vacancy acts as a donor but its...

The problem of a hydrogenic donor impurity in a cubic quantum dot with finite confinement potential is solved by the finite difference method. The discretized matrix equation needs to be solved for its eigenvalues and eigenfunctions. An algorithm of nonlinear programming is utilized for this problem. The results match references qualitatively in the weak regime, but introduce new problems in th...

The features of InAs quantum dots obtained on GaAs(001) single-crystal substrates by ion-beam sputtering were investigated. It has been shown that in the range of ion energies of 150 to 200 eV at a temperature of 500 °C and a beam current of 120 µA InAs quantum dots with average dimensions below 15 nm and a surface density of 1011 cm-2 are formed. The technique of controlled doping of InAs/GaAs...

The correlation factor for impurity diffusion by a vacancy-mechanism is a function of the vacancy-jump frequencies in the surroundings of the diffusing atom. Since in Si and Ge the vacancy can act as an acceptor, a long-range Coulomb interaction between donor atoms and vacancies exists. The usual assumption, that only a few vacancy-jump frequencies in the im­ mediate surroundings of the vacancy...

We develop a theory of optical transitions in Coulomb impurity-doped two-dimensional transition metal dichalcogenide monolayers and study the from spin-resolved valence band to (Coulomb) donor acceptor impurities under influence synthetic valley-selective magnetic field produced by mechanical strain. It is shown that properties system are determined strength field, which uncovers an experimenta...

: The linear and nonlinear intraband optical absorption coefficients in GaAs three-dimensional single quantum rings are investigated. Taking into account the combined effects of hydrostatic pressure and electric field, applied along the growth direction of the heterostructure, the energies of the ground and first excited states of a donor impurity have been found using the effective mass approx...