Wide-band-gap II-VI semiconductors have a potential for a variety of applications especially in the areas of light-emitting and light-detecting devices, photovoltaic conversion (solar cells), X-ray and "t--ray detection, etc. In all applications, a good bipolar electrical conduction, i.e. efficient doping from both nand p-side is essential, but due to the reasons which are not yet fully underst...

This study aimed to assess pharmacy students’ knowledge about doping substances used in sport, explore their attitudes toward doping and investigate their misuse of doping drugs. A questionnaire was developed and employed to collect data from bachelor of pharmacy (BPharm) students at the International University for Science and Technology (IUST). Two-hundred and eighty students participated in ...

The possibility of reliable and reproducible p-type doping of (31 l)A GaAs by Si during molecular-beam epitaxial growth and the application of such doping in the realization of high-performance electronic devices have been investigated. It is seen that p-type doping upto a free hole concentration of 4~ lOI cmB3 can be obtained under conditions of low As, flux and high ()660 “C) growth temperatu...

We study the effect of delta-doping on the hole capture probability in ten-period p-type Ge quantum dot photodetectors. The boron concentration in the delta-doping layers is varied by either passivation of a sample in a hydrogen plasma or by direct doping during the molecular beam epitaxy. The devices with a lower doping density is found to exhibit a lower capture probability and a higher photo...

We perform a systematic slave-boson mean-field analysis of the three-band model for cuprates with first-principle parameters. Contrary to widespread belief based on earlier mean-field computations low doping stripes have a linear density close to 1/2 added hole per lattice constant. We find a dimensional crossover from 1D to 2D at doping approximately 0.1 followed by a breaking of particle-hole...

We have investigated the doping dependencies of the basal areas in single-layer high-Tc cuprates La2−xSrxCuO4 and HgBa2CuOx, as well as in two-layer Y1−yCayBa2Cu3Ox and HgBa2CaCu2Ox. The basal areas not only tend to shrink on hole doping, as expected from single electron quantum chemistry, but exhibit also a “bulge” around optimum doping. We attribute the “bulge” to the effects of the strongly ...

BACKGROUND Despite the growing body of literature and putative links between the use of ergogenic nutritional supplements, doping and illicit drugs, it remains unclear whether, in athletes' minds, doping aligns with illicit behaviour or with functional use of chemical or natural preparations. To date, no attempt has been made to quantitatively explore athletes' mental representation of doping i...

We report on studies of the n-type doping dependence of the Raman response of double-wall carbon nanotubes (DWCNT). The G-line is found to be shifting upon doping. The direction of the shift depends on if the exciting laser light is in resonance with mainly inner or outer tubes. The RBM response upon doping shows that a charge transfer from the dopant happens predominantly to the outer tubes at...

In this research, we aim to clarify the relationship between the structural distortion due to doping and the superconductivity existence in the FeAs4 structure. For this, we have prepared polycrystalline of NdFeAsO0.8F0.2, NdFeAs0.95Sb0.05O0.8F0.2 and Nd0.99Ca0.01FeAsO0.8F0.2 samples by one-step solid state reaction method. The structural and electrical properties of the samples were characteri...

BACKGROUND Knowing and, if necessary, altering competitive athletes' real attitudes towards the use of banned performance-enhancing substances is an important goal of worldwide doping prevention efforts. However athletes will not always be willing to reporting their real opinions. Reaction time-based attitude tests help conceal the ultimate goal of measurement from the participant and impede st...